Researchers based in USA and South Korea have developed a gate stack for III-V quantum well metal-oxide-semiconductor field-effect transistors (QW MOSFETs) based on a bilayer dielectric of beryllium oxide (BeO) and hafnium dioxide (HfO2) ...
Tags: InGaAs MOSFETs QW MOSFETs InGaAs ALD, Electrical, Electronics
For first quarter 2014, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $90.8m, up 24% on $73.2m last quarter and 47% on $61.8m a year ago. Growth was driven mainly by ...
Tags: Veeco, LED backlighting
Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...
Tags: GaN, MOCVD, Gallium Nitride Diodes
Taiwan's National Tsing Hua University has claimed the highest optical 3dB modulation bandwidth of ~463MHz at 50mA for a 500nm-wavelength blue-green indium gallium nitride (InGaN) LED [Chien-Lan Liao et al, IEEE Electron Device Letters, ...
Tags: blue-green LEDs, taiwan, LED, LED light, Electrical, Electronics
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has announced the availability and full technical support for 17 ...
Tags: Electrical, Electronics
GaN-on-Si technology has emerged naturally as an alternative to GaN-on-sapphire — the mainstream technology for LED applications. But today, despite potential cost benefits, the mass adoption of GaN-on-Si technology for LED ...
Tags: GaN-on-Si, Electrical, Electronics
Taiwan-based LED chip makers and packaging houses are generally optimistic about their business operations in the second quarter of 2014 mainly due to strong demand from LCD TVs and mobile terminal devices, and in lighting, according to ...
Tags: LED Firms, LED Chips, packaging houses
Seoul-based LG Innotek, a subsidiary of Korea's LG Group, has begun mass producing UV LED chips that deliver what is described as world-class output of 560mW (at a drive current of 500mA) on a single chip. LG Innotek has developed the ...
Altatech of Montbonnot, near Grenoble, France (a subsidiary of Soitec since January 2012) has received an order for its Orion LedMax wafer inspection and metrology system from Osram Opto Semiconductors GmbH of Regensburg, Germany. Osram ...
Light emitting diodes are becoming increasingly popular in various fields of the electronics industry: they can be used inside digital clocks, for street illumination applications, to send information and in large-size television screens ...
Tags: LEDs, Martini Tech, LED Applications
LED epitaxial wafer and chip maker Epistar has reported record consolidated revenues of NT$2.37 billion (US$78 million) for March, growing 19.54% sequentially and 38.29% on year. Epistar's January-March consolidated revenues stood at ...
Fangliang Gao and Guoqiang Li of South China University of Technology have developed a technique to grow high-quality indium gallium arsenide (InGaAs) on gallium arsenide substrates using an ultrathin amorphous buffer [Appl. Phys. Lett., ...
The firm will use the funds to add to its product portfolio, team, and strategic partnerships. Most of the new funding comes from new investors. A new investor led the round, with participation from existing shareholders including ...
Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...
Tags: InGaN LEDs, Silicon, semiconductor
Martini Tech Inc of Tokyo, Japan has started to offer a new gallium nitride (GaN) metal-organic chemical vapour deposition (MOCVD) service on sapphire substrates for LED applications. Founded in 2013, Martini Tech offers microfabrication ...