Hamamatsu reports record-power-density VCSEL Hamamatsu Photonics K.K.has reported the first demonstration of 10-watt-class output power for a vertical-cavity surface-emitting laser(VCSEL)array with ion-implanted isolated current ...
Tags: Hamamatsu, Record-Power-Density, current apertures, VCSEL
The LED chip market continues to experience oversupply problems.However,in first-half 2012,most tier-one LED firms in Taiwan were operating with full capacity,which has led to the possibility of expanding capacities.LED chipmaker Epistar ...
Tags: China, Commentary, LED
But figures were 20% up compared to the previous quarter Worldwide silicon wafer area shipments increased by 2% in the second quarter of 2012 compared to the corresponding quarter in 2011, according to analysis by SEMI Silicon ...
Tags: silicon wafer, increased, SMG, SEMI Silicon Manufacturers Group
LED chipmaker Epistar will completely take over subsidiary Huga Optotech through a share swap in which one Epistar share will be exchanged for 4.85 Huga shares, Epistar has announced. The merger will take effect on December 28, 2012. The ...
Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors
Certification service provider, Integrated Service Technology (IST), has announced the signing of a memorandum of understanding (MOU) with Hong Kong-based testing service firm Intertek to combine resources such as the US Energy Star ...
Tags: Semiconductor Technology, Lights, Lighting, Intertek
Soraa will lead DOE funded research on GaN LED substrates 08 Aug 2012 The DOE's transformational-energy agency ARPA-E has selected GaN-on-GaN startup Soraa to lead a project on the development of bulk GaN substrates. Startup Soraa emerged ...
Tags: Soraa, DOE, GaN, GaN-on-GaN, LED, LED Substrates, ARPA-E
Makers will boost the luminous efficacy of white LEDs, targeting 200 lm/W and above, and pursue breakthroughs in substrate materials, epitaxial chips and preparation.The southern province continues to solidify its status as the key hub for ...
Tags: LED
Toshiba plans silicon-based LED production; Azzurro installs Veeco MOCVD 31 Jul 2012 Veeco Instruments announced that Azzurro Semiconductors has commissioned a new Veeco MOCVD reactor for silicon-based LED production while Toshiba plans to ...
Researchers in Korea have been studying how to improve graphene transparent conducting layers(TCLs)using gold nanoparticle(Au-NP)decoration.The team was variously associated with Gwangju Institute of Science and Technology,Korea Basic ...
IQE expects revenue growth in second-half 2012 following Q2 recovery According to an interim trading update for first-half 2012, epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK expects to report first-half revenue of ...
Second-quarter 2012 revenues of Taiwan-based LED chipmakers climbed out of the trough with capacity utilization rates rising to 80-90%. The firms believe third-quarter 2012 capacity utilization rates to remain similar to the peak level seen ...
Tags: LED Chip
Silicon nitride protection for graphene electrodes in UV-LEDs Korea University, US Naval Research Laboratory and University of Florida have improved the reliability of graphene electrodes in ultraviolet light-emitting diodes (UV-LEDs) ...
Second-quarter 2012 revenues of Taiwan-based LED chipmakers climbed out of the trough with capacity utilization rates rising to 80-90%.The firms believe third-quarter 2012 capacity utilization rates to remain similar to the peak level seen ...
Tags: LED lighting, Epistar, Formosa Epitaxy, Genesis Photonics, Lextar
US-based researchers have reported record external quantum efficiencies(EQE)of 10.4%for deep ultraviolet light-emitting diodes(DUV-LEDs)emitting at a wavelength of 278nm at a continuous-wave current of 20mA[Max Shatalov et ...