Rensselaer Polytechnic Institute (RPI) and Samsung Electronics have used tapered micro-pillars of titanium dioxide (TiO2) to increase light extraction from nitride semiconductor light-emitting diodes (LEDs) by up to 100% [Ming Ma et al, ...
Tags: LEDs
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview,NY,USA says that China's HC SemiTek Corporation has purchased a Veeco TurboDisc MaxBright gallium nitride(GaN)metal-organic chemical vapour ...
Tags: Veeco Instruments Inc., HC SemiTek Corporation, GaN, LED chip
18 October 2012 Lithium aluminate substrate for low-cost nonpolar gallium nitride Researchers based in Germany and the Netherlands have been studying the potential for growing nonpolar gallium nitride(GaN)on lithium ...
Strategies United predicts that by 2015 the global market for high brightness LEDs (HB-LEDs) will generate revenues of $18.9 billion, representing a compound growth rate of 11.8%. A key factor in the growth of HB-LEDs is the use of ...
Tags: LED
ARC Energy's CHES furnaces enable Suzhou Hyperion Geocrystal to enter volume production of sapphire cores and wafers, for high-brightness LEDs, ranging from 2-8 mm in diameter. Larger wafers are one avenue toward lower-cost LEDs and a ...
Epistar, Taiwan's largest manufacturer of packaged LEDs has decided to trial silicon-based wafers. The company is hoping to take advantage of cost savings in the backend of the LED manufacturing process to in turn broaden SSL deployment. ...
Gallium nitride on silicon (GaN-on-Si)-based LEDs have been fabricated using high‐brightness LED structures of Epistar Corp of Taipei, Taiwan and the patented technology for 150mm GaN-on-Si substrates of Azzurro Semiconductors AG of ...
Tags: GaN-on-Si
Taiwan-based LED epitaxial wafer and chip maker Epistar had September revenues of NT$1.616 billion (US$54.7 million), representing a decrease on month of 6.09%, while LED packaging service provider Everlight Electronics had sales of ...
Tags: LED
With the Chinese government banning imports and sales of 100W-and-above incandescent lamps in the country starting on October 1, 2012, Taiwanese LED makers who have actively built footholds will hail huge growth potential of the domestic ...
Tags: LED Lighting
9 October 2012 IQE's III-V-on-Si laser materials enable next-gen hard disk drive technology Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK says that it has produced epitaxial wafers combining the optical properties of ...
Tags: IQE III-V-on-Si, laser material, next-gen hard disk drive technology
China's government has been providing subsidies to help its domestic LED industry. Some firms have been benefitting but others remain in limbo amid rapid product price falls. Slowing demand for LED billboards According to sources from ...
Tags: led, sapphire substrate
The company will boost its output of key metalorganic chemicals that are used in the deposition of LED semiconductor materials. AkzoNobel has announced plans to boost capacity at one of its US sites in ...
Tags: LED
The Silicon Valley Intellectual Property Law Association named Shuji Nakamura the winner of its Inventor of the Year award for innovations including Soraa's Gan-on-GaN technology. The Silicon Valley Intellectual Property Law Association ...
Tags: LED
The next technological challenge for the Solid-state lighting industry is the transition to silicon wafers. Everybody knows that silicon offers many advantages in terms of cost and availability. Nevertheless, the changeover bears many ...
Tags: LED
Taiwan-based LED epitaxial wafer and chip maker Tekcore,suffered a net loss in 2011 and is likely to see continued net losses in 2012 due to large depreciation costs for its 11 4-inch MOCVD sets,according to stock market analysts. Tekcore ...