Under the leadership of the European Defence Agency (EDA), the multi-national R&D project MANGA (Manufacturable GaN-SiC-substrates and GaN epitaxial wafers supply chain) says that it has succeeded in implementing a supply chain for the ...
Tags: GaN Technologies, HEMT structures, electronics components
Turkey's Bilkent University has used hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) to make gallium nitride (GaN) thin-film transistors (TFTs) at temperatures below 250°C [S. Bolat et al, Appl. Phys. Lett., vol104, ...
Tags: HCPA-ALD GaN Thin-film transistors, Electrical, Electronics, Transistors
UK-based Plessey has entered into a distribution agreement with CODICO GmbH, a demand creation distributor for electronic components, headquartered in Perchtoldsdorf, Austria and with offices across Europe. With CODICO, Plessey is expanding ...
Tags: LED, Electrical, Electronics, LED products
Directed by Infineon Technologies AG together with partners Aixtron, SiCrystal AG and SMA Solar Technology AG, the three-year German project NeuLand (begun in late 2010) has developed highly integrated components and electronic circuits ...
Following the announcement on June 30 that Epistar is acquiring Formosa Epitaxy (FOREPI), Epistar will have over 400 MOCVD reactors including those from FOREPI's China subsidiaries, more than double the GaN MOCVD of its nearest competitor, ...
Researchers in Taiwan claim to be the first to use bumping technology to create piezoelectric-induced performance enhancement in flip-chip packaged aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) [Szu-Ping Tsai ...
Agilent Technologies Inc of Santa Clara, CA, USA has announced several innovations for the 2014 release of its suite of device modeling and characterization software tools. The suite comprises the Integrated Circuits Characterization and ...
Tags: GaN HEMTs, 3D Finfets
Based on a scenario where electric vehicles and hybrid electric vehicles (EV/HEV) begin adopting gallium nitride (GaN) in 2018-2019, the ramp-up of the GaN power device market will be quite impressive starting in 2016, at an estimated ...
Tags: Yole GaN HEMT Power electronics, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that Dr John Glaser has joined its ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
An international team of researchers has been exploring nanomembranes of beta-phase gallium oxide (β-Ga2O3) as a channel material for high-voltage field-effect transistors (FETs) [Wan Sik Hwang et al, Appl. Phys. Lett., vol104, ...
Tags: Electrical, Electronics, Transistor
At the PCIM (Power Conversion Intelligent Motion) Asia 2014 conference in Shanghai World Expo Exhibition and Convention Center, China (17-19 June), Michael de Rooij (executive director, Application Engineering) from Efficient Power ...
Tags: Electrical, Electronics
University of California Santa Barbara (UCSB) and National Taiwan University (NTU) have been optimizing ammonia-based molecular beam epitaxy (MBE) for gallium nitride (GaN) growth on a range of substrates [Erin C. H. Kyle et al, J. Appl. ...
Tags: GaN MBE Veeco, Electrical, Electronics
Spending on RF power semiconductors for the wireless infrastructure markets leapt up again in 2013 to more than $1bn, according to the latest study ‘RF Power Semiconductors’ from ABI Research’s High-Power Active Devices ...
Diamond Microwave Devices Ltd of Leeds, UK, which was spun out in 2006 from the diamond electronics team of Element Six and specializes in gallium nitride (GaN)-based microwave solid-state power amplifiers (SSPAs), is extending its range of ...
Tags: GaN-on-diamond, Diamond Microwave
Raytheon Company of Waltham, MA, USA has been awarded a $6m study and demonstration contract by the US Office of Naval Research (ONR) to further develop an enterprise air surveillance radar (EASR) powered by gallium nitride (GaN) ...