Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced publication of the second ...
Tags: EPC, E-mode GaN FETs
GreenPeak Technologies, the world leading low power RF semiconductor company for Smart Home and IoT applications, has launched its wireless LED Lighting solution, a low-cost ambient lighting application based on the new GreenPeak GP651 ...
Tags: GreenPeak, Wireless LED Lighting, LED bulbs
Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
Dialight, the innovative global leader in LED lighting technology for industrial applications, today unveiled its new wireless occupancy sensor, a unique battery-powered plug-and-play sensor that speeds and simplifies installation to ...
Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...
Korean LED chip manufacturer Seoul Semiconductor unveiled its breakthrough second generation CSP LED product Wicop2, and spoke about its future outlook during a press conference at the Marriot Hotel in Shanghai, China on Tuesday. ...
Tags: Seoul Semiconductor, CSP, Wicop2, wafer level LED
Darfon Electronics the turnkey green energy total power solutions provider, new launched a whole series of built-in 10KV lightning surge protected rugged & ultra efficiency outdoor LED lighting driver 60W ~ 270W smart series. To catch the ...
Tags: LED driver, Darfon, lightning field tests
Avago Technologies Ltd (which designs and supplies III-V-based analog interface components for communications, storage, consumer and industrial applications) has launched the AFBR-57E6APZ ultra-low-power Fast Ethernet small-form-factor ...
Tags: Avago Technologies, analog interface components, fiber-optic transceiver
Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) is sampling a 100G QSFP28 client-side transceiver that meets both the CWDM4 MSA and CLR4 Alliance optical interface ...
Tags: Oclaro, QSFP28, transceiver
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is displaying its new GS66540C 650V 100A high-current GaN power ...
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD