In 2014, the Nobel Prize in physics was awarded for the discovery of the gallium-nitride-based blue-light LED and its use for new, efficient LED-based white lamps. The development efforts in this field, however, do not stop there. The ...
Tags: LED, Nobel Prize
Xaar will launch a new Thin Film silicon MEMS technology platform at drupa 2016. Xaar's printheads are at the heart of a vast number of industrial inkjet print systems around the world delivering both production efficiencies and increased ...
Tags: Xaar, MEMS technology, Drupa 2016
Specialty foundry TowerJazz (which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek, Israel, and at its subsidiaries Jazz Semiconductor Inc in Newport Beach, CA, USA and TowerJazz Japan Ltd) has announced its SiGe Terabit ...
Tags: TowerJazz RF CMOS SiGe
HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...
Cadmium telluride (CdTe) thin-film photovoltaic module maker First Solar Inc of Tempe, AZ, USA has surpassed 1GWDC of photovoltaic (PV) solar capacity shipped to India, making it the first thin-film PV module manufacturer to achieve this ...
Tags: PV Capacity, thin-film modules
First Solar Inc of Tempe, AZ, USA - which makes thin-film photovoltaic modules based on cadmium telluride (CdTe) as well as providing engineering, procurement & construction (EPC) services - have entered into a framework agreement for ...
Tags: First Solar, Silicon
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has made available the EPC9066, EPC9067 ...
By optimizing various manufacturing processes, ZSW (Zentrum für Sonnenenergie- und Wasserstoff-Forschung — or Center for Solar Energy and Hydrogen Research — Baden-Württemberg) in Stuttgart, Germany has raised the ...
Tags: ZSW CIGS Manz
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has launched two new broadband 75Ω monolithic microwave integrated circuit (MMIC) front-end, low-noise amplifiers (LNAs) designed ...
Tags: Skyworks
The European Commission's European Research Council (ERC) has granted €2.5m to professor Mircea Guina of the Optoelectronics Research Centre (ORC) at Tampere University of Technology (TUT) to apply new technology in solar cell ...
The Semiconductor's business unit of Raytheon UK in Glenrothes, Scotland (a subsidiary of Raytheon Company of Waltham, MA, USA) and Newcastle University's School of Electrical and Electronic Engineering have collaborated to produce silicon ...
Tags: Raytheon, Newcastle University, Sic-Based Analog Circuitry
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...