A team at Massachusetts Institute of Technology has developed an etch stop technique to improve performance of recessed-gate nitride semiconductor metal-insulator-semiconductor field-effect transistors (MISFETs) [Bin Lu et al, IEEE Electron ...
Tags: GaN MISFET GaN MOCVD, Electronics, Etch
Dublin-based fab-less chip company Ikon Semiconductor has jumped into the competitive LED light bulb market with its first product: a dimmable single-stage ac-dc converter. Like iWatt's new chip for non-dimmable bulbs (see page??), Ikon ...
Tags: fab-less chip company, Ikon Semiconductor, LED light bulb market
Photovoltaic inverter design is now seen as the crucial element in solar power development, writes James Turner, and he discusses some of the challenges that can shape PV inverter design. Over the last few years the photovoltaic (PV) ...
Intel has scaled back plans for the next version of Itanium, raising questions about the future of the 64-bit server chip, used primarily in HP’s high-end Integrity servers. In a short notice posted quietly to its website on January ...
Tags: Intel, back plans, Itanium
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has made available the EPC9004 development board, featuring the firm’s enhancement-mode gallium nitride on silicon (eGaN) field-effect transistors (FETs) for power ...
Tags: EPC, Power Systems, eGaN FETs
Suzhou Institute of Nano-tech and Nano-bionics (SINANO) in China has been using double-gated nitride semiconductor high-electron-mobility transistors (HEMTs) to understand the effects of field-plates in improving dynamic performance [Guohao ...
Tags: SINANO, China, double-gated nitride semiconductor, HEMTs
Researchers in Korea have used aluminium gallium nitride (AlGaN) heterostructures similar to high-electron-mobility transistors (HEMTs) to create Schottky barrier diodes (SBDs) with increased forward current without damaging the breakdown ...
Tags: aluminium gallium nitride, AlGaN, heterostructures, HEMTs
Researchers in the USA have developed radio frequency switches based on nitride semiconductor voltage-controlled capacitors (varactors) [F. Jahan et al, IEEE Electron Device Letters, 9 January 2013]. The team, consisting of engineers from ...
Tags: radio frequency switches, nitride semiconductor voltage, SET
Following six years of R&D, Raytheon has opened a silicon carbide fab in Glenrothes Scotland which will offer foundry services as well as its own line of high-temperature ICs. Its SiC process has been developed on-site, with Government ...
Tags: Raytheon, silicon carbide fab, IC
A non-dimmable, single-stage architecture seeks to minimize the bill of materials for LED A-lamps, thereby opening the market to greater SSL adoption. Power IC specialist iWatt has introduced a single-stage LED driver IC that is ...
Tags: LED A-lamps, SSL adoption, lighting
Researchers in Taiwan and USA have developed lateral insulated-gate bipolar junction transistors (IGBTs) using 4H silicon carbide (SiC) technology [Kuan-Wei Chu et al, IEEE Electron Device Letters, published online 9 January 2013]. ...
Tags: insulated gate bipolar transistors, silicon carbide, Electron Device
Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
The U.S. Defense Advanced Research Projects Agency and a consortium of top semiconductor companies are handing out US$194 million to universities for research that addresses the physical limitations of semiconductors and chips. The ...
Tags: U.S.Defense Advanced Research Projects Agency, semiconductor, chips
The recent spat between Samsung and Qualcomm with Samsung announcing an eight core IC for mobile phones and Qualcomm's CEO dismissing it as a publicity stunt, is put in context by ST-Ericsson Fellow Marco Cornero and Andreas Anyuru. ...
Tags: Samsung, Qualcomm, mobile phones
The US Semiconductor Research Corporation (SRC) and DARPA will spend $194m in the next five years under the STARnet initiative to fund six university microelectronics research projects. C-FAR at University of Michigan: Research future ...