What is decribed as the first European-made device based on gallium nitride (GaN) to be sent into space has completed its second year of operations. Hosted by the European Space Agency (ESA) on its Earth-observing Proba-V mini-satellite in ...
X-FAB Silicon Foundries, the leading More than Moore foundry, has announced the industry’s first cost-efficient 180nm SOI technology for automotive and industrial applications that need to operate in harsh environments. X-FAB's new ...
Tags: X-FAB, SOI technology, high-voltage devices, auto accessories
Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up that enables smaller and more efficient electrical converters, has raised €5.7m in first-round financing that will be used to produce high-speed power switching ...
Tags: GaN-on-Si, GaN switching device
With funding of about €3.9m from the German Federal Ministry of Education and Research (BMBF), 12 partners in the German automotive sector, its supply industry and the sciences (led by Infineon Technologies AG of Munich, Germany) are ...
Tokyo-based Mitsubishi Electric Corp says that its traction inverters incorporating all-silicon carbide (SiC) power modules, installed in a 1000 Series urban commuter train operated by Japan's Odakyu Electric Railway Co Ltd, have been ...
Tags: Mitsubishi, Electric's Railcar
First Solar Inc of Tempe, AZ, USA has raised its world record for cadmium telluride (CdTe) photovoltaic (PV) module conversion efficiency to 18.6% aperture efficiency for a full-size module, as measured and certified by the US Department of ...
Tags: First Solar, Thin-film, photovoltaic CdTe
Princeton Power Systems of Princeton, NJ, USA - which designs and manufactures products for energy management, micro-grid operations and electric vehicle charging - has demonstrated for the first time a grid-tied bi-directional power ...
Tags: SiC JFETs, Power Converter
Richard Eden, senior analyst (Power Semiconductors) at market research firm IHS Technology, attended the recent PCIM (Power Conversion Intelligent Motion) Europe 2015 tradeshow in Nuremberg, Germany (19-21 May), and in a Research Note has ...
Tags: GaN SiC, Power electronics
At Intersolar Europe 2015 in Munich, Germany (10-12 June), nano-electronics research center Imec of Leuven, Belgium has announced a thin-film perovskite photovoltaic (PV) module with a solar energy power conversion efficiency of 8% measured ...
KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
In booth 4D18 at PCIM (Power Conversion Intelligent Motion) Asia 2015 in Shanghai (24–26 June), GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for ...
Tags: GaN Systems, Power electronics, Transistor
Huami Co Ltd expects sales of its Xiaomi Mi Bands will reach 10 million in the third quarter, making it the largest maker of wearable fitness devices in the world. Launched last year, the Mi Band monitors fitness levels and tracks sleep ...
Tags: Wearable Devices, Fitness Devices
A team at IBM Research's Zurich Research Laboratory in Rüschlikon, Switzerland, with support from the firm's T. J. Watson Research Center in Yorktown Heights, New York, has developed what it says is a relatively simple, robust and ...
Tags: IBM III-Vs-on-Si, Electrical, Electronics, IBM
Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...
At SID's Display Week 2015 event in San Jose, CA, USA (31 May-5 June), Grenoble-based micro/nanotechnology R&D center CEA-Leti of France announced that it has demonstrated a path to fabricating high-density micro-LED arrays for the next ...
Tags: Leti III-V lab microLED, Electrical, Electronics, LED