4H SiC articles & resources on Made-in-China.com

Pallidus Launches M-SiC Silicon Carbide Source Material and Technology Platform

Aug 18, 2017

Pallidus Inc (a Melior Innovation company) of Houston, TX, USA has launched its proprietary M-SiC silicon carbide source material and technology platform, with the capability to deliver cost/performance parity against silicon devices in the ...

Tags: Silicon Carbide, Pallidus

Bi-Directional Silicon Carbide Planar Insulated-Gate Bipolar Transistor

Jul 5, 2016

Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...

Tags: Bipolar Transistor

Samco Launches Ald System for Gate Oxides in Wide-Bandgap Power Devices

Dec 21, 2015

SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has launched an atomic layer deposition (ALD) system focusing on gate oxide ...

Tags: Samco MOCVD GaN, AL-1 ALD system, Electronics

a New Edge Termination Technique for 4h-Sic High-Voltage Devices Has Been Developed

May 19, 2015

North Carolina State University in the USA has developed a new edge termination technique for 4H polytype silicon carbide (4H-SiC) high-voltage devices [Woongje Sung et al, IEEE Electron Device Letters, published online 29 April 2015]. The ...

Tags: Silicon carbide, 4H-SiC, high-voltage devices

Silicon Carbide Bipolar Opamp Performance at 500ºC

Aug 2, 2014

Sweden's Royal Institute of Technology (KTH) has created a monolithic operational amplifier circuit using 4H polytype silicon carbide (SiC) bipolar junction transistors (BJTs) [Raheleh Hedayati et al, IEEE Electron Device Letters, vol35, ...

Tags: SiC SiC BJTs, Electrical, Electronics

China's Nanjing University Produced SiC APDs

Jun 4, 2014

China's Nanjing University has produced silicon carbide (SiC) avalanche photodiodes (APDs) with the lowest claimed dark count rate (DCR) at high temperatures of 150°C, compared with any other semiconductor material [Dong Zhou et al, ...

Tags: Silicon Carbide, avalanche photodiodes

European Program Aimed at Developing a Cost-Effective and Reliable Technology

May 21, 2013

LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...

Tags: SiC, substrates GaN

The Team Consisted of Researchers From Taiwan National Tsing Hua University

Jan 25, 2013

Researchers in Taiwan and USA have developed lateral insulated-gate bipolar junction transistors (IGBTs) using 4H silicon carbide (SiC) technology [Kuan-Wei Chu et al, IEEE Electron Device Letters, published online 9 January 2013]. ...

Tags: insulated gate bipolar transistors, silicon carbide, Electron Device

Raytheon Has Successfully Tested Silicon Carbide (SIC) Mixed-Signal Devices

Dec 24, 2012

Raytheon Company of Waltham, MA, USA says that its technology facility in Glenrothes, Scotland, UK has successfully tested silicon carbide (SiC) mixed-signal devices at temperatures up to 400°C. “Raytheon UK’s aim is to ...

Tags: Raytheon, SiC, silicon carbide, company news

Researchers Have Created Graphene Nanoribbon Structures with Regions

Dec 11, 2012

Researchers based in the USA and France have created graphene nanoribbon structures with regions that have relatively large energy bandgaps of about 0.5eV [J. Hicks et al, Nature Physics, published online 18 November 2012]. Flat graphene ...

Tags: silicon carbide, graphene, nanoribbon structures, bandgaps, energy bands

CREE Announces Latest Silicon Carbide (SiC)

Sep 6, 2012

Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs ...

Tags: Wafer

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