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AlGaN GaN HEMTs
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Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors
Jun 21, 2016Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
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Forward-Bias Gate Breakdown in HEMTs with Enhancement-Mode P-Gan Gate
Sep 14, 2015Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
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NTT Released GAN HEMTs From Sapphire Substrate to Thermally Conducting Copper
Dec 4, 2014NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
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High-Frequency Performance of Gallium Nitride Gan Has Been Reported in Singapore
Sep 5, 2014Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
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Taiwan Researchers Claim to Bumping Technology to Create Piezoelectric-Induced Performance
Jul 7, 2014Researchers in Taiwan claim to be the first to use bumping technology to create piezoelectric-induced performance enhancement in flip-chip packaged aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) [Szu-Ping Tsai ...
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Singapore's Nanyang Developed Conventional AlGaN High-Electron-Mobility Transistors
Apr 8, 2014Singapore's Nanyang Technological University has developed conventional aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) with record-breaking figures-of-merit (FOMs) for frequency and breakdown performance [Kumud ...
Tags: Electrical, Electronics
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HKUST Is Developing Techniques to Monolithically Integrate HEMTs
Mar 24, 2014Hong Kong University of Science and Technology (HKUST) is developing techniques to monolithically integrate high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) based on aluminium indium gallium nitride (AlInGaN) ...
Tags: Nitride Semiconductor, LEDs, LED regions
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Xidian University Has Produced 'Normally-off' GaN HEMTs
Nov 12, 2013China’s Xidian University has produced ‘normally-off’ gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with a thin high-aluminium-content aluminium gallium nitride (AlGaN) barrier layer [Kai Zhang et al, ...
Tags: Xidian University, normally-off, GaN, HEMTs
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NTU Has Developed a Passivation Process for Aluminium Gallium Nitride
Oct 12, 2013Singapore’s Nanyang Technological University (NTU) has developed a passivation process for aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on silicon substrates that significantly ...
Tags: Nitride HEMTs, Electrical
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Chiao-Tung University Has Developed a Titanium Nitride/Copper Gate Structure
Sep 29, 2013Taiwan’s National Chiao-Tung University has developed a titanium nitride/copper (TiN/Cu) gate structure for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) that shows improvements over a comparison ...
Tags: GaN HEMT, Electronics
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European Program Aimed at Developing a Cost-Effective and Reliable Technology
May 21, 2013LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...
Tags: SiC, substrates GaN
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EPSRC Has Awarded Funding Totaling More Than £823,800m to Two Universities
May 2, 2013The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
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HfO2 Has Superior Blocking Characteristics, Surface Passivation Properties
Jan 18, 2013Seoul National University and Korea Electronics Technology Institute have been developing hafnium dioxide (HfO2) as a gate insulator for aluminium gallium nitride (AlGaN) metal-oxide-semiconductor high-electron-mobility transistors ...
Tags: HfO2, gate insulator, Lights, Lighting
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Step Is Important for The Easy Transfer of Devices Onto an Integrated CMOS Platform
Jan 7, 2013Researchers in Singapore claim the first DC and microwave performance measurements for 0.15μm-gate aluminium gallium nitride(AlGaN)on gallium nitride high-electron-mobility transistors(HEMTs)on silicon substrates with gold-free ...
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Singapore Researchers Report "for The First Time" The DC and Microwave Characteristics
Oct 29, 2012Singapore researchers report "for the first time" the DC and microwave characteristics of submicron-gate aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on 8-inch (200mm) diameter Si(111) ...
Tags: MOCVD