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Indium Gallium Arsenide Quantum Well Transistors on 300mm Silicon

May 18, 2017

Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...

Tags: Transistors, MOSFETs

Conax Acquires Quartz Engineering

Apr 25, 2017

Conax Technologies of Buffalo, NY, USA (a manufacturer of temperature sensors, compression seal fittings and feedthroughs, probes, sensors, wires, electrodes and fiber-optic cables) has acquired Quartz Engineering of Tempe, AZ, USA (which ...

Tags: Conax, Quartz Engineering

Toyota Develops Behaviour Observation Method for Lithium Ions in Electrolyte

Nov 29, 2016

Toyota Motor has developed the world's first method for observing the behavior of lithium ions (Li-ions) in an electrolyte when a Li-ion battery charges and discharges. By using this method, it is possible to observe in real-time, the ...

Tags: Toyota Motor, Lithium Ions

Reducing Subthreshold Swing of Gallium Arsenide Transistors

Sep 28, 2016

Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...

Tags: KIST, GaAs, FET

Indium Gallium Nitride Solar Cells with Positive Temperature Coefficient

Sep 20, 2016

Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...

Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient

University of Wisconsin–Madison Claims First Carbon Nanotube Transistors to Outperform Silicon

Sep 7, 2016

For decades, researchers have tried to harness the unique properties of carbon nanotubes (CNTs) to create high-performance electronics that are faster or consume less power — resulting in longer battery life, faster wireless ...

Tags: CNTs, GaAs, FETs

Relaxing Multiple Quantum Wells with Low-Temperature Barriers

Jul 27, 2016

South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...

Tags: Low-Temperature Barriers, Quantum

Epitaxial Growth of Laser Diodes on Wafer-Bonded InP/Si Substrates

Jun 12, 2016

Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...

Tags: Laser Diodes, Si Substrates

III-Nitride High-Electron-Mobility Transistors on Flexible Tape

Apr 11, 2016

Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...

Tags: AlGaN HEMTs AlGaN HEMTS MBE PECVD

Indium Gallium Arsenide MOSFET Used as Radio-Frequency Switch

Mar 30, 2016

Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...

Tags: InGaAs MOSFET RF switch

Indium Gallium Nitride Barriers Enhance LED Power And Efficiency

Mar 15, 2016

South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...

Tags: LEDs, MQW, barriers, InGaN, MOCVD

Low-Threshold Yellow Laser Diodes

Dec 21, 2015

Yellow laser diodes with low thesholds have been produced by Jijun Feng (University of Shanghai for Science and Technology, China) and Ryoichi Akimoto (National Institute of Advanced Industrial Science and Technology (AIST), Japan) based on ...

Tags: Yellow lasers BeZnCdSe 560-590nm lasers, Ryoichi Akimoto, Electronics

UTEC Develops LED Lamp Powered by Plant Growth

Nov 25, 2015

Stimulated by a real-world problem, the shortage of electric energy in remote areas of Peru and particularly in rural areas of the tropical forest, the Universidad de Ingeniería y Tecnología (UTEC), through a team of ...

Tags: UTEC, LED Lamp, Plant Growth

OLED Applications from Outer Space Down to Earth

Nov 12, 2015

Jay Kim, Head of Marketing and Business Development Head of Marketing and Business Development at Business Center OLED, Philips’ OLED lighting division shares in this blog entry how OLEDs are making their ways into outer space and ...

Tags: Philips, OLED lighting, outer space, everyday lighting

German Researchers Create Fluorescent Protein Based LEDs

Nov 10, 2015

LEDs are up to 80 percent more energy-efficient than normal light bulbs and last around five times as long as energy-saving light bulbs. As a result they are being used more and more frequently as a source of light. Nevertheless, white LEDs ...

Tags: LEDs, Protein-based LEDs, FAU

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