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GaN layers
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Allos Challenges Conventional Beliefs of GaN-on-Si
Aug 2, 2017In the presentation ‘Low vertical leakage current of 0.07μm/mm2 at 600V without intentional doping for 7μm-thick GaN-on-Si’ at the 12th International Conference on Nitride Semiconductors (ICNS-12) in Strasbourg, France ...
Tags: technology engineering, epiwafer
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Oxford Instruments Develops SiC Via Etch for GaN-on-SiC RF Device Manufacture
Oct 12, 2016UK-based process equipment maker Oxford Instruments has announced the development and launch of a silicon carbide (SiC) via plasma etch process using its PlasmaPro100 Polaris etch system. SiC is becoming an increasingly important ...
Tags: Oxford Instruments, SiC, GaN RF devices
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Chemical Lift-off of Full-Wafer Gallium Nitride with Zinc Oxide Interlayer
Aug 10, 2016Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
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Dependence of Efficiency Droop on Carrier Density in Non-Polar Samples
Jul 16, 2016The University of Manchester and the University of Cambridge in the UK have been comparing efficiency droop in low-temperature photoluminescence (PL) experiments on non-polar m-plane and polar c-plane indium gallium nitride (InGaN) quantum ...
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Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors
Jun 21, 2016Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
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Hybrid Growth of Gallium Nitride Tunnel Junctions
Feb 14, 2016University of California Santa Barbara (UCSB) in the USA has been developing a hybrid technique to create III-nitride tunnel junctions (TJs) using a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy ...
Tags: Gallium Nitride Tunnel, Hybrid
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Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes
Dec 2, 2015Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
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Claiming Record 4.7kv Breakdown for Gallium Nitride P-N Diodes
Oct 15, 2015Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...
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Tunnel Junction for Vertical-Cavity Surface-Emitting Laser
Sep 23, 2015University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...
Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE
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Researchers in USA Develops Vertical Schottky and Pn GaN Diodes on Silicon
Jul 27, 2015Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
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UCSB in The USA Has Improved Hole Concentrations in p-GaN
Jun 19, 2015University of California Santa Barbara (UCSB) in the USA has improved hole concentrations in p-type gallium nitride (p-GaN) by using indium as a surfactant in ammonia-based molecular beam epitaxy (NH3MBE) [Erin C. H. Kyle et al, Appl. Phys. ...
Tags: Gallium Nitride, Indium Surfactant
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EPA Is Used to Alter The Hydrogen Content in P-Type GaN Layers with a View
Jun 16, 2015Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride
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X-FAB and Exagan Have Entered Into a Joint Development Agreement
May 21, 2015X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble and Toulouse, France have entered into a joint development agreement to industrialize Exagan's GaN-on-silicon technology, begin producing high-speed power switching ...
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Researchers Claimed Record High Breakdown Voltage for Aluminium Gallium Nitride
Mar 26, 2015Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...
Tags: silicon diodes, GaN substrates
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Anvil and Cambridge Centre for GaN Grown Cubic GaN on 3c-Sic on Silicon Wafers
Dec 12, 2014Anvil Semiconductors Ltd of Coventry, UK and the Cambridge Centre for GaN (part of University of Cambridge’s Department of Materials Science and Metallurgy) have grown cubic GaN on 3C-SiC on silicon wafers by metal-organic chemical ...
Tags: green LEDs, silicon wafers, Electrical