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GaN on Si technology
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Plessey Orders Aixtron AIX G5+ C MOCVD System for GaN-on-Si Monolithic Micro-LEDs
Sep 21, 2018Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has received an order for an AIX G5+ C Planetary Reactor metal-organic chemical vapor deposition (MOCVD) system from UK-based Plessey Semiconductors to boost its ...
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Indium Gallium Nitride Laser Diode Directly Integrated with Silicon
Sep 9, 2016Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
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EpiGaN Adds Brussels/Beijing-Based Private Equity Fund ACAPITAL as Investor
Aug 31, 2016EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...
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EpiGaN Nominated for Eu Innovation Radar Prize
Aug 17, 2016EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination
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Epigan's Production Facility Certified as Compliant to ISO9001: 2015
Jun 30, 2016EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers, says that on 7 June it received official notification from the International ...
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Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes
Dec 2, 2015Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
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Lattice Power CTO: Low and Mid-Power LED Chip Becomes Major Trend in the Industry
Nov 12, 2015The LED industry is gradually maturing in 2015, with products cost/performance (C/P) ratio becoming increasingly important. Low and mid-power flip chip products are increasingly valued by the industry. To further understand this trend ...
Tags: LED industry, LED chip, Chip Scale Packaging
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Toshiba Expands Line-up of High Power LEDs for Lighting Applications
Nov 10, 2015Toshiba Corporation’s Semiconductor & Storage Products Company today announced the addition of 4 new products to its line-up of the “TL1L4 series” of high power white LEDs, that achieve high luminous flux of 140lm(min.). ...
Tags: Toshiba, high power LED, LED lighting
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Transfer of ALLOS' 150 and 200mm GaN-on-Si epi Technology to Epistar Concluded in Under 6 Months
Aug 20, 2015Technology engineering & licensing firm ALLOS Semiconductors GmbH of Dresden, Germany have concluded its joint project to establish its mature 150 and 200mm gallium nitride on silicon (GaN-on-Si) technology at Epistar Corp of Hsinchu ...
Tags: electronics, semiconductor, Azzurro GaN-on-Si, Epistar LEDs
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M/A-COM Has Launched Its Fourth Generation of GaN-on-Si Technology
May 14, 2015M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched its fourth generation of gallium nitride on ...
Tags: GaN Technology, silicon carbide
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Cambridge University Chooses Veeco's Propel MOCVD System
Apr 21, 2015Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...
Tags: GaN-on-Si, Power Electronics, LEDs
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SFCE Signed a MOUto Acquire a 51% Ownership Stake in Lattice Power Corp
Mar 26, 2015Hong Kong-based Shunfeng International Clean Energy Ltd (SFCE) has signed a memorandum of understanding (MOU) to acquire a 51% ownership stake in Lattice Power Corp of Nanchang, China, which claims to have been the first company to realise ...
Tags: silicon LEDs, LED lighting
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ALLOS Acquired The Exclusive Ownership of All Technology of The Former AZZURRO Semi AG
Dec 17, 2014ALLOS Semiconductors GmbH of Dresden, Germany, which was founded in June, says that it has acquired (via auction) the exclusive ownership of all technology, know-how and intellectual property of the former AZZURRO Semiconductors AG, which ...
Tags: patent landscape, market, technology strategy, Electrical
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EpiGaN Named in The 2014 Global Cleantech 100's Ones to Watch List
Nov 18, 2014III-nitride epitaxial material supplier EpiGaN nv of Hasselt, Belgium has been named in the 2014 Global Cleantech 100's Ones to Watch list, produced by San Francisco-based Cleantech Group (whose mission is to connect corporates to ...
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Plessey Announces The Realization of GaN-on-Si High-Brightness LED Technology
Nov 17, 2014UK-based Plessey has announced the realization of high-volume, large-die LED performance based on its gallium nitride on silicon MaGIC (Manufactured on GaN-on-Si I/C) high-brightness LED (HBLED) technology. The large die benefits from ...
Tags: LED Technology, LEDs