Researchers in Japan have been developing planarization techniques for gallium nitride (GaN) surfaces [Shun Sadakuni et al, Jpn. J. Appl. Phys., vol52, p036504, 2013]. The researchers from Osaka University, Ritsumeikan University and Ebara ...
Researchers in Japan and Switzerland have used a laser treatment of sapphire substrates to increase the thickness of gallium nitride (GaN) layers grown by hydride vapor phase epitaxy (HVPE) to around 200μm [Hideo Aida et al, Appl. Phys. ...
The higher growth rates and improved material properties made possible by the HVPE system are expected to significantly reduce process costs while boosting device performance compared with the traditional MOCVD process. Initial pre-payment ...
Tags: HVPE system, process costs, device performance, MOCVD process
HVPE system expected to lower the cost of LED production and accelerate adoption in commercial and residential lighting GT Advanced Technologies (NASDAQ: GTAT) and Soitec (NYSE Euronext: SOI), today announced a development agreement and a ...
Soitec of Bernin, France, which makes engineered substrates including silicon-on-insulator wafers and III-V epiwafers) has announced development and licensing agreements allowing GT Advanced Technologies Inc of Nashua, NH, USA (a provider ...
Tags: HVPE System, LED, GT, LED lighting
Soraa has developed the next generation of its high external quantum efficiency GaN on GaN LEDs, which outperform the best-documented LED laboratory result by Nichia Chemical Co. at current densities of 100 A/cm2 and beyond as described in ...
Tags: Soraa, GaN on GaN LEDs, LED laboratory
The LED consists of (1) a blue LED chip made on a β-type Ga2O3 substrate by using GaN-based semiconductor and (2) a fluorescent material. Compared with a case where a common blue LED chip formed on a sapphire substrate is used, the new ...
Japanese companies from Tamura Corp and Koha Co Ltd have created a white LED using gallium oxide (β-type Ga2O3) and exhibited it at Lighting Japan 2013 from Jan 16 to 18, 2013. The LED consists of a blue LED chip made on a ...
Tags: Japanese companies, LED, gallium oxide
Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive based on ...
Tags: Bulk GaN, traditional silicon, gallium nitride, reckons market
HexaTech Inc of Morrisville,NC,USA has reported the results of an ongoing collaboration with development partner Tokuyama Corp of Tokyo,Japan that has demonstrated UV-C LEDs with exceptional output power and improvements in internal quantum ...
Researchers from Japan and the USA have reported the first fabrication on hydride vapor phase epitaxy (HVPE) aluminium nitride (AlN) substrates of aluminium gallium nitride (AlGaN) light-emitting diodes (LEDs) that emit at the ...
Tags: DUV, LEDs, AlGaN, AlN substrates, HVPE, light-emitting diodes
Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, says that it has helped Naval Research Laboratory (NRL) scientists ...
Tags: GaN
18 October 2012 Lithium aluminate substrate for low-cost nonpolar gallium nitride Researchers based in Germany and the Netherlands have been studying the potential for growing nonpolar gallium nitride(GaN)on lithium ...
HexaTech, Inc.announced the results of an ongoing collaboration with development partner Tokuyama Corporation of Tokyo, Japan, which has demonstrated exceptional output power and dramatic internal quantum efficiency (IQE) improvements. ...
Kyma's GaN crystal growth system is based on the hydride vapor phase epitaxy(HVPE)growth process which is a proven high growth rate approach for producing high purity crystalline compound semiconductor materials including GaN,GaAs,InP,and ...
Tags: Metallurgy, Crystal, Materials