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IEMN
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III-Nitride High-Electron-Mobility Transistors on Flexible Tape
Apr 11, 2016Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
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IEMN Claimed a Record Combination of Specific on-Resistance and Breakdown Voltage
Feb 27, 2014Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France and EpiGaN nv in Belgium have claimed a record combination of specific on-resistance and breakdown voltage for a double heterostructure field-effect transistor ...
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NTU Has Developed a Passivation Process for Aluminium Gallium Nitride
Oct 12, 2013Singapore’s Nanyang Technological University (NTU) has developed a passivation process for aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on silicon substrates that significantly ...
Tags: Nitride HEMTs, Electrical
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IEMN Developed a GaN on Silicon High-Electron-Mobility Transistor
Apr 17, 2013Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
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GaN-Based Transistors Are Promising for Future High-Frequency/High-Power Devices
Mar 22, 2013The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
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Researchers Based in France and Germany Have Developed Techniques for Growing InAs
Dec 6, 2012Researchers based in France and Germany have developed techniques for growing indium arsenide (InAs) channel structures on silicon [L. Desplanque et al, Appl. Phys. Lett., vol101, p142111, 2012]. Room-temperature mobility for the epitaxial ...
Tags: growing indium arsenide, InAs, chemicals
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Reducing Noise at High Frequency in Nitride-on-Silicon Transistors
Aug 10, 2012Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors
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IEMN Has Demonstrated High-Power-Density Nitride High-Electron-Mobility Transistors
Jun 20, 201220 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...
Tags: GaN/Si HEMTs, IEMN, AlGaN