InGaAs articles & resources on Made-in-China.com

Applied Optoelectronics Announces 200G PAM4 Pin Photodiode Array

Mar 12, 2018

Applied Optoelectronics Inc (AOI) of Sugar Land, TX, USA – a manufacturer of optical components, modules and equipment for fiber access networks in the Internet data-center, cable TV broadband, fiber-to-the-home (FTTH) and telecom ...

Tags: Photodiode Array, optical components

Applied Optoelectronics Announces 100g Pin Photodiode Array

Aug 7, 2017

Applied Optoelectronics Inc (AOI) of Sugar Land, near Houston, TX, USA, a manufacturer of broadband fiber-optic access network products (including components, modules and equipment) for the Internet datacenter, CATV broadband, ...

Tags: Applied Optoelectronics

Monolithic Electrically Injected Microdisk Lasers on Silicon

Aug 1, 2017

Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. ...

Tags: silicon photonics, Lasers

Princeton Infrared Technologies Announces First Megapixel SWIR Camera with No ITAR Export Restrictions

Jul 31, 2017

Princeton Infrared Technologies Inc (PIRT) of Monmouth Junction, NJ, USA - which designs and manufactures both shortwave-infrared cameras and one- and two-dimensional imaging arrays based on indium gallium arsenide (InGaAs) - has announced ...

Tags: Princeton, SWIR Camera

Indium Gallium Arsenide Quantum Well Transistors on 300mm Silicon

May 18, 2017

Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...

Tags: Transistors, MOSFETs

Multi-Junction Si Solar Cell Efficiency Exceeds

Nov 12, 2016

Silicon-based solar cells dominates today’s solar energy industry, while this technology has difficulty in bringing the conversion efficiency beyond 23% for commercialized solar cells in mass production. In order to break the ...

Tags: Solar Cell, solar energy

Integrating InGaAs Well in Ridges on 300mm Silicon

Sep 29, 2016

Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...

Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University

Indium Gallium Arsenide Laser Diode on Exact Germanium-on-Silicon Substrate

Sep 9, 2016

Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...

Tags: InGaAs, Laser diodes, III-Vs-on-Si

RASIRC Renews Funding for ALD Research at UCSD

Sep 7, 2016

RASIRC Inc of San Diego, CA, USA (whose products purify and deliver ultra-pure liquids and gases) has renewed its funding agreement with the University of California, San Diego (UCSD) for on-going semiconductor processing research. The gift ...

Tags: RASIRC, UCSD, ALD

Boosting Transconductance in Indium Gallium Arsenide finFETs

Sep 6, 2016

Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...

Tags: MIT, finFETs

LayTec Adds Nanoscale SPC for Quaternary Films to Epinet 2016 Analysis Software

Jul 27, 2016

In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...

Tags: metrology system, x-ray diffraction

Transfer Printing of Optically Pumped III-V Device on Silicon-on-Insulator

Jun 30, 2016

Ghent University/IMEC in Belgium and X-Celeprint in Ireland/USA claim "the first III-V optoelectronic components transfer printed on and coupled to a silicon photonic integrated circuit" [Andreas De Groote et al, Optics Express, vol24, ...

Tags: III-V optoelectronic, silicon photonic

Subwavelength Micro-Disk Lasers on Exact (001) Silicon Substrate

Jun 23, 2016

Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...

Tags: Subwavelength, CMOS-compatible platform

Sofradir Launches HD 10μM Pixel-Pitch IR Detector as It Celebrates 30th Anniversary at SPIE DCS

Apr 19, 2016

At the SPIE Defense + Commercial Sensing (DCS 2016) event in Baltimore, MD, USA (17–21 April), Sofradir of Palaiseau near Paris, France, which makes cooled infrared (IR) detectors based on mercury cadmium telluride (MCT/HgCdTe), ...

Tags: Sofradir HgCdTe IR detectors

Indium Gallium Arsenide MOSFET Used as Radio-Frequency Switch

Mar 30, 2016

Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...

Tags: InGaAs MOSFET RF switch

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