Applied Optoelectronics Inc (AOI) of Sugar Land, TX, USA – a manufacturer of optical components, modules and equipment for fiber access networks in the Internet data-center, cable TV broadband, fiber-to-the-home (FTTH) and telecom ...
Applied Optoelectronics Inc (AOI) of Sugar Land, near Houston, TX, USA, a manufacturer of broadband fiber-optic access network products (including components, modules and equipment) for the Internet datacenter, CATV broadband, ...
Tags: Applied Optoelectronics
Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. ...
Tags: silicon photonics, Lasers
Princeton Infrared Technologies Inc (PIRT) of Monmouth Junction, NJ, USA - which designs and manufactures both shortwave-infrared cameras and one- and two-dimensional imaging arrays based on indium gallium arsenide (InGaAs) - has announced ...
Tags: Princeton, SWIR Camera
Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...
Tags: Transistors, MOSFETs
Silicon-based solar cells dominates today’s solar energy industry, while this technology has difficulty in bringing the conversion efficiency beyond 23% for commercialized solar cells in mass production. In order to break the ...
Tags: Solar Cell, solar energy
Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
RASIRC Inc of San Diego, CA, USA (whose products purify and deliver ultra-pure liquids and gases) has renewed its funding agreement with the University of California, San Diego (UCSD) for on-going semiconductor processing research. The gift ...
Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...
Ghent University/IMEC in Belgium and X-Celeprint in Ireland/USA claim "the first III-V optoelectronic components transfer printed on and coupled to a silicon photonic integrated circuit" [Andreas De Groote et al, Optics Express, vol24, ...
Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
At the SPIE Defense + Commercial Sensing (DCS 2016) event in Baltimore, MD, USA (17–21 April), Sofradir of Palaiseau near Paris, France, which makes cooled infrared (IR) detectors based on mercury cadmium telluride (MCT/HgCdTe), ...
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch