Results have been announced for the research project ‘Integrated High-Volume Production along the LED Value-Added Chain for Large Wafers and Panels’ (InteGreat), which ran between December 2014 and February 2018 supported by the ...
Tags: packaging, LED product
In-situ metrology system maker LayTec AG of Berlin, Germany recently shipped a comprehensive EpiCurve TT/Pyro 400 in-situ metrology hybrid system to an industrial customer in North America. The metrology station combines automated in-situ ...
Tags: MOCVD, GaN-on-SiC
In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...
Aluminium gallium nitride (AlGaN) buffer layers with high aluminium content are necessary for optimal UV-C LED performance. But their band-edge lies below 300nm, so established 405nm in-situ reflectance is insensitive to the surface ...
In-situ metrology system maker LayTec AG of Berlin, Germany says that, following the request of customers and utilizing the modular concept of its new Gen3 in-situ platform, it has customized and expanded the related in-situ metrology ...
In-situ metrology system maker LayTec AG of Berlin, Germany says that deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has qualified EpiNet 2016, its latest control and analysis software for EpiTT and EpiCurve TT ...
Tags: LayTec AG, EpiNet 2016
In-situ metrology system maker LayTec AG of Berlin, Germany says that epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has purchased a large number of its latest metrology systems for fab-wide metal-organic chemical vapor ...
Temperature measurement during metal-organic chemical vapor deposition (MOCVD) growth of GaN-on-silicon (GaN/Si) devices is challenging, notes in-situ metrology system maker LayTec AG of Berlin, Germany. Theoretically, conventional infrared ...
Tags: MOCVD, GaN devices
After unveiling its third generation of in-situ metrology tools last October, in-situ metrology system maker LayTec AG of Berlin, Germany says that the EpiTT Gen3 is now available as the first representative of this Gen3 product class. ...
Tags: UV LED epitaxy, sapphire
The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...
AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...
Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs
A fully optimized production concept for LED components and light modules in which all the process steps are coordinated with one another could give rise to completely new types of LED and also reduce their manufacturing costs. The declared ...
Tags: LED components, crystal growth, Lights
Supported by the German Ministry for Education and Research (BMBF) as part of the 'Photonic Process Chains' initiative, the project 'Integrated High-Volume Production along the LED Value-Added Chain for Large Wafers and Panels' (InteGreat) ...
Tags: Osram HB-LEDs, BMBF, Electronics
Following its Manufacturing Advanced Functional Materials (MAFuMa) call issued in February, the UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded £20m to 10 new research projects that aim to advance the ...
Tags: Functional Materials, Electronics
Researchers in Germany have developed two-dimensional hole gas (2DHG) gallium nitride (GaN) channel structures with record mobility [B Reuters et al, J. Phys. D: Appl. Phys., vol47, p175103, 2014]. Mobility for 2DHGs in GaN is usually ...
Tags: Electrical, Electronics