In-situ metrology system maker LayTec AG of Berlin, Germany recently shipped a comprehensive EpiCurve TT/Pyro 400 in-situ metrology hybrid system to an industrial customer in North America. The metrology station combines automated in-situ ...
Tags: MOCVD, GaN-on-SiC
In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...
Aluminium gallium nitride (AlGaN) buffer layers with high aluminium content are necessary for optimal UV-C LED performance. But their band-edge lies below 300nm, so established 405nm in-situ reflectance is insensitive to the surface ...
In-situ metrology system maker LayTec AG of Berlin, Germany says that, following the request of customers and utilizing the modular concept of its new Gen3 in-situ platform, it has customized and expanded the related in-situ metrology ...
In-situ metrology system maker LayTec AG of Berlin, Germany says that deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has qualified EpiNet 2016, its latest control and analysis software for EpiTT and EpiCurve TT ...
Tags: LayTec AG, EpiNet 2016
In-situ metrology system maker LayTec AG of Berlin, Germany says that epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has purchased a large number of its latest metrology systems for fab-wide metal-organic chemical vapor ...
Temperature measurement during metal-organic chemical vapor deposition (MOCVD) growth of GaN-on-silicon (GaN/Si) devices is challenging, notes in-situ metrology system maker LayTec AG of Berlin, Germany. Theoretically, conventional infrared ...
Tags: MOCVD, GaN devices
After unveiling its third generation of in-situ metrology tools last October, in-situ metrology system maker LayTec AG of Berlin, Germany says that the EpiTT Gen3 is now available as the first representative of this Gen3 product class. ...
Tags: UV LED epitaxy, sapphire
The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...
AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...
Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs
In-situ metrology system maker LayTec AG of Berlin, Germany notes that it is known that some properties of gallium nitride (GaN)-based light-emitting quantum wells (QW) can be improved by using a-plane III-nitrides. However, during ...
Tags: LayTec Metrology, AIN Interlayers
It is known that metal-organic vapor phase epitaxy (MOVPE) growth of AlGaAs on GaAs is limited by lattice mismatch at room temperature and not at growth temperature (A. Maassdorf et.al., J. Cryst. Growth 370 (2013) 150-153), notes in-situ ...
Tags: Laser Structures, Electronics
In-situ metrology system maker LayTec AG of Berlin, Germany says that Dr Tony SpringThorpe of the National Research Council of Canada recently reported fast and easy temperature calibration of all three heating zones of his showerhead ...
Tags: Electrical, Electronics
LayTec AG of Berlin, Germany, which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications, says that researchers at Germany's Ulm University have used LayTec's EpiCurve TT ...
Tags: LayTec HVPE GaN, Electrical, Electronics
LayTec AG of Berlin, Germany, which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications, says that its spectroscopic photoluminescence (PL) system PearL has been ...
Tags: CIGS Spectroscopic photoluminescence, Electrical, Electronics