Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...
Tags: Transistors, MOSFETs
Olympus has announced that the flagship OM-D E-M1 Mark II is coming to the UK – albeit with a hefty price tag attached. The professional-grade mirrorless camera will set snappers back a hefty £1,849.99 for the body only. ...
Tags: Olympus, LCD touch-panel
Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has launched an atomic layer deposition (ALD) system focusing on gate oxide ...
Now, with the energy conservation, the environmental protection of the word was on the agenda, people about life concept also a shift in recent years has LED to rapid industry requirements and keep pace with The Times. In the energy ...
Tags: LED Display Screen, Indoor Display, Chipshow
Korea Institute of Science and Technology has presented what it says is the first demonstration of indium gallium arsenide on-insulator (In0.53Ga0.47As-OI) transistors with a buried yttrium oxide (Y2O3 BOX) layer [SangHyeon Kim et al, IEEE ...
k-Space Associates Inc of Dexter, MI, USA (which supplies instrumentation and software for surface science and thin-film technology applications) and the Colleges of Nanoscale Science and Engineering (CNSE) at SUNY Polytechnic Institute ...
Tags: III-nitride materials research, growth parameters, Electrical
European sales of semiconductors in July 2014 amounted to US$ 3.273 billion, an increase of 14.9% compared to the same month in 2013, the European Semiconductor Industry Association (ESIA) writes. The high Year-on-Year growth in Europe, ...
Tags: SEMI, Electrical, Electronics, Semiconductors
The European semiconductor distribution industry continues to deliver good news. According to DMASS (Distributors’ and Manufacturers’ Association of Semiconductor Specialists) semiconductor distribution sales in Q2/CY14 grew by ...
Tags: European, Growth, Electronics
IBM is investing $3bn over the next 5 years in two broad research and early-stage development programs to push the limits of chip technology needed to meet the emerging demands of cloud computing and ‘big data’ systems. The ...
Tags: IBM, Big-Data Systems
Vishay Intertechnology, Inc. VSH +0.23% today announced that it will be exhibiting its latest semiconductors and passive components in booth 1C-205 at Power System Japan, a focused exhibition on power systems at Techno-Frontier 2014, being ...
Tags: Vishay, Electrical, Electronics
Sweden's Royal Institute of Technology (KTH) has created a monolithic operational amplifier circuit using 4H polytype silicon carbide (SiC) bipolar junction transistors (BJTs) [Raheleh Hedayati et al, IEEE Electron Device Letters, vol35, ...
Tags: SiC SiC BJTs, Electrical, Electronics
European semiconductor sales amounted US$ 3.125 billion in May 2014, an increase of 10.1% versus the same month one year ago, the World Semiconductor Trade Statistics WSTS reported on July 3. European semiconductor sales for the first 5 ...
Tags: Electrical, Electronics, semiconductor