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Nitride Semiconductor
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Nitride Semiconductor Files UV-LED Patent Infringement Lawsuit in USA Against Digi-Key
Sep 26, 2017Nitride Semiconductor Co Ltd of Tokushima, Japan has filed a patent infringement lawsuit with the US District Court for the District of Minnesota against Digi-Key Corp (trading as Digi-Key Electronics), which sells ultraviolet ...
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Reducing Laser Diode Optical Leakage with Indium Gallium Nitride Waveguides
Sep 23, 2016Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...
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Hexagonal Boron Nitride Enables Cost-Effective, Compact Solid-State Detection of Neutron Signals
Aug 19, 2016A group of Texas Tech University researchers led by professors Hongxing Jiang and Jingyu Lin has developed hexagonal boron nitride semiconductor as a possible low-cost alternative to helium gas detectors in neutron detection ('Realization ...
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Seoul Viosys Files Uv Led Patent Infringement Lawsuit Against P3
Aug 10, 2016South Korean UV LED and blue LED chip maker Seoul Viosys Co Ltd has filed a lawsuit with the Federal District Court of Southern New York accusing P3 International (a US-based manufacturer of home electronics products that sells its products ...
Tags: UV LEDs, Seoul Viosys, Electronic Technology
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Seoul Viosys Acquisition of SETi Approved by U.S. DOD
Nov 12, 2015Seoul Semiconductor affiliate’s acquisition proposal of Sensor Electronic Technology (SETi) has been approved by the U.S. Department of Defense, according to a report by The Korea Times. "Seoul Viosys, an affiliate of Seoul ...
Tags: Seoul Semiconductor, UV LED chips, Viosys
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Seoul Viosys and Watersprint to Provide Uv-Led Water Purification Technology for Bangladesh
Nov 10, 2015UV LED firm Seoul Viosys plans to partner with Watersprint of Medicon Village, Lund, Sweden, which develops water purification products and systems for the disinfection of bacteria, viruses and protozoa. The system will be used to supply ...
Tags: UV LEDs, Seoul Optodevice, Water Purification Technology
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Seoul Viosys and SETi to Jointly Commercialise Violeds UV LED Sterilization Technology
Sep 15, 2015Seoul Viosys Co Ltd and Sensor Electronic Technology Inc (SETi) of Columbia, SC, USA (in which Seoul Viosys acquired a majority stake just last month) are to jointly commercialize and expand sales of Violeds technology. The technology, ...
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Researchers Claimed Record High Breakdown Voltage for Aluminium Gallium Nitride
Mar 26, 2015Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...
Tags: silicon diodes, GaN substrates
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EPC2100 Family of EGaN Power Transistor Products Honored by Electronic Products Magazine
Jan 8, 2015Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that its EPC2100 family of eGaN ...
Tags: Electronic Products, Electrical
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Development of Nitride Semiconductor Solar Cells
Jan 6, 2015Rensselaer Polytechnic Institute in the USA has developed nitride semiconductor solar cells with high quantum efficiency for short wavelengths (370-450nm) and concentrated photovoltaics at temperatures up to 400°C [Liang Zhao et al, ...
Tags: PV Performance, Electrical
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Hina's Xidian University Has Been Developing III-Nitride DHS with with InGaN Channels
Dec 25, 2014China’s Xidian University has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, ...
Tags: HEMTs, InGaN channels
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Deep DUV LEDs Based on III-Nitride Semiconductor Nanowires Have Been Developed
Dec 8, 2014Ohio State University and University of Illinois at Chicago have developed deep ultraviolet (DUV) light-emitting diodes (LEDs) based on III-nitride semiconductor nanowires [Thomas F Kent et al, Nanotechnology, vol25, p455201, 2014]. The ...
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NTT Released GAN HEMTs From Sapphire Substrate to Thermally Conducting Copper
Dec 4, 2014NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
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NRL Has Received The Japan Society of Applied Physics' 2014 Outstanding Paper Award
Sep 23, 2014An interdisciplinary team at the US Naval Research Laboratory (NRL) has received the Japan Society of Applied Physics’ 2014 Outstanding Paper Award. The award is only given to a select group of papers that present excellent ...
Tags: NRL, Award, Electronics
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UCSB Used PEC to Create 405nm-Wavelength Vertical-Cavity Surface-Emitting Lasers
Aug 20, 2014University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...
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