Nitride Semiconductor articles & resources on Made-in-China.com

Nitride Semiconductor Files UV-LED Patent Infringement Lawsuit in USA Against Digi-Key

Sep 26, 2017

Nitride Semiconductor Co Ltd of Tokushima, Japan has filed a patent infringement lawsuit with the US District Court for the District of Minnesota against Digi-Key Corp (trading as Digi-Key Electronics), which sells ultraviolet ...

Tags: UV LEDs, LEDs

Reducing Laser Diode Optical Leakage with Indium Gallium Nitride Waveguides

Sep 23, 2016

Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...

Tags: IHPP, TopGaN, InGaN, LDs

Hexagonal Boron Nitride Enables Cost-Effective, Compact Solid-State Detection of Neutron Signals

Aug 19, 2016

A group of Texas Tech University researchers led by professors Hongxing Jiang and Jingyu Lin has developed hexagonal boron nitride semiconductor as a possible low-cost alternative to helium gas detectors in neutron detection ('Realization ...

Tags: Boron nitride, Texas Tech University

Seoul Viosys Files Uv Led Patent Infringement Lawsuit Against P3

Aug 10, 2016

South Korean UV LED and blue LED chip maker Seoul Viosys Co Ltd has filed a lawsuit with the Federal District Court of Southern New York accusing P3 International (a US-based manufacturer of home electronics products that sells its products ...

Tags: UV LEDs, Seoul Viosys, Electronic Technology

Seoul Viosys Acquisition of SETi Approved by U.S. DOD

Nov 12, 2015

Seoul Semiconductor affiliate’s acquisition proposal of Sensor Electronic Technology (SETi) has been approved by the U.S. Department of Defense, according to a report by The Korea Times. "Seoul Viosys, an affiliate of Seoul ...

Tags: Seoul Semiconductor, UV LED chips, Viosys

Seoul Viosys and Watersprint to Provide Uv-Led Water Purification Technology for Bangladesh

Nov 10, 2015

UV LED firm Seoul Viosys plans to partner with Watersprint of Medicon Village, Lund, Sweden, which develops water purification products and systems for the disinfection of bacteria, viruses and protozoa. The system will be used to supply ...

Tags: UV LEDs, Seoul Optodevice, Water Purification Technology

Seoul Viosys and SETi to Jointly Commercialise Violeds UV LED Sterilization Technology

Sep 15, 2015

Seoul Viosys Co Ltd and Sensor Electronic Technology Inc (SETi) of Columbia, SC, USA (in which Seoul Viosys acquired a majority stake just last month) are to jointly commercialize and expand sales of Violeds technology. The technology, ...

Tags: UV LED, LEDs

Researchers Claimed Record High Breakdown Voltage for Aluminium Gallium Nitride

Mar 26, 2015

Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...

Tags: silicon diodes, GaN substrates

EPC2100 Family of EGaN Power Transistor Products Honored by Electronic Products Magazine

Jan 8, 2015

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that its EPC2100 family of eGaN ...

Tags: Electronic Products, Electrical

Development of Nitride Semiconductor Solar Cells

Jan 6, 2015

Rensselaer Polytechnic Institute in the USA has developed nitride semiconductor solar cells with high quantum efficiency for short wavelengths (370-450nm) and concentrated photovoltaics at temperatures up to 400°C [Liang Zhao et al, ...

Tags: PV Performance, Electrical

Hina's Xidian University Has Been Developing III-Nitride DHS with with InGaN Channels

Dec 25, 2014

China’s Xidian University has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, ...

Tags: HEMTs, InGaN channels

Deep DUV LEDs Based on III-Nitride Semiconductor Nanowires Have Been Developed

Dec 8, 2014

Ohio State University and University of Illinois at Chicago have developed deep ultraviolet (DUV) light-emitting diodes (LEDs) based on III-nitride semiconductor nanowires [Thomas F Kent et al, Nanotechnology, vol25, p455201, 2014]. The ...

Tags: LEDs, DUV LEDs

NTT Released GAN HEMTs From Sapphire Substrate to Thermally Conducting Copper

Dec 4, 2014

NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...

Tags: Boron Nitride, GaN Transistors

NRL Has Received The Japan Society of Applied Physics' 2014 Outstanding Paper Award

Sep 23, 2014

An interdisciplinary team at the US Naval Research Laboratory (NRL) has received the Japan Society of Applied Physics’ 2014 Outstanding Paper Award. The award is only given to a select group of papers that present excellent ...

Tags: NRL, Award, Electronics

UCSB Used PEC to Create 405nm-Wavelength Vertical-Cavity Surface-Emitting Lasers

Aug 20, 2014

University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...

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