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Power Switching Devices
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VisIC Launches 1200V Family of GaN Power Switching Devices with Integral Iso-Driver
Sep 20, 2016At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) ...
Tags: ECCE2016, VisIC Technologies, MISHEMTs
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Bi-Directional Silicon Carbide Planar Insulated-Gate Bipolar Transistor
Jul 5, 2016Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
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Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate
Apr 29, 2016Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
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Silicon Carbide Chip Business Was Worth More Than $133m
Aug 4, 2015According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...
Tags: SiC Market, power electronics
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Exagan Raised €5.7m to Produce High-Speed Power Switching Devices on 200mm Wafers
Jun 25, 2015Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up that enables smaller and more efficient electrical converters, has raised €5.7m in first-round financing that will be used to produce high-speed power switching ...
Tags: GaN-on-Si, GaN switching device
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Girvan Patterson Presented a Paper 'the Automotive Market Opportunity for Gan'
May 26, 2015At the Power Conversion Intelligent Motion (PCIM) Europe 2015 event in Nurnberg, Germany (19-21 May), president Girvan Patterson of GaN Systems Inc in Ottawa, Ontario, Canada - a fabless developer of gallium nitride (GaN)-based power ...
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X-FAB and Exagan Have Entered Into a Joint Development Agreement
May 21, 2015X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble and Toulouse, France have entered into a joint development agreement to industrialize Exagan's GaN-on-silicon technology, begin producing high-speed power switching ...
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Panasonic and Sansha Electric Developed a Compact SiC Power Module
Mar 5, 2015Panasonic Corp of Osaka, Japan and Osaka-based Sansha Electric Manufacturing Co Ltd have developed a compact silicon carbide (SiC) power module, together with highly efficient operation of power switching systems. The module is said to have ...
Tags: Panasonic, silicon carbide
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An Agreement Between Gan Systems and Ecomal Europe
Jan 29, 2015GaN Systems Inc of Ottawa, Ontario, Canada has signed an agreement for Ecomal Europe to promote and distribute its gallium nitride (GaN)-based high-power switching transistors. GaN Systems' gallium nitride power transistors are based on ...
Tags: GaN Systems, high-power switching transistors, Electrical
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GAN Systems Has Signed an Agreement for Japanese Company Daito Electron
Dec 5, 2014GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has signed an agreement for Japanese company Daito Electron Co Ltd ...
Tags: GaN Systems, Daito Electron, Electrical
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Dulles Announce Availability of a Gate Driver Evaluation Board
Nov 24, 2014Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced availability of a gate driver evaluation board and has expanded its design support for its SiC junction transistor (SJT, claimed ...
Tags: SiC Junction Transistors, Driver Evaluation Board, Electrical
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Epitaxial Deposition and Process Equipment Maker Veeco Instruments Inc of Plainview
Nov 21, 2014Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has introduced the Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) system, which incorporates single-wafer ...
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Taiwan Researchers Claim to Bumping Technology to Create Piezoelectric-Induced Performance
Jul 7, 2014Researchers in Taiwan claim to be the first to use bumping technology to create piezoelectric-induced performance enhancement in flip-chip packaged aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) [Szu-Ping Tsai ...
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$27 Million in Funding From Arpa-E Was Announced by Cheryl Martin
Oct 24, 2013ARPA-E Deputy Director Cheryl Martin today announced $27 million in funding from the Energy Department’s Advanced Research Projects Agency-Energy (ARPA-E) for 14 projects aimed at developing next-generation power conversion devices ...
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Cheryl Martin Has Announced $27m in Funding
Oct 22, 2013ARPA-E deputy director Cheryl Martin has announced $27m in funding from the US Department of Energy's (DOE) Advanced Research Projects Agency-Energy (ARPA-E) for 14 projects aimed at developing next-generation power conversion devices that ...
Tags: Electrical, Electronics
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