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Schottky diode
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Vertical Gallium Nitride Schottky Diode Combining High Current/Breakdown
Apr 8, 2016HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...
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Researchers Claimed Record High Breakdown Voltage for Aluminium Gallium Nitride
Mar 26, 2015Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...
Tags: silicon diodes, GaN substrates
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CREE Introduced a New Mosfet Design Kit
Jan 8, 2015Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) power devices, has introduced a new MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance in a configurable ...
Tags: configurable half-bridge circuit, MOSFET design, Electrical
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Cree Has Expanded Its Silicon Carbide 1.2 KV Six-Pack Power Module Family
Oct 14, 2014Cree Inc of Durham, NC, USA has expanded its silicon carbide (SiC) 1.2 kV six-pack power module family with a new 20A all-SiC module suited for 5-15 kW three-phase applications. Based on Cree’s C2M SiC MOSFET and Z-Rec SiC Schottky ...
Tags: Cree, SiC, Electronics
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EPC Announced The Availability of a Complete Demonstration Wireless Power Transfer Kit
Aug 20, 2014Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the availability of a ...
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Passivating Nitride Transistors Without Vacuum Processing
Aug 11, 2014Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
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Microsemi Corp Introduced Its New Silicon Carbide MOSFET Product Family
May 23, 2014Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has introduced its new silicon carbide (SiC) MOSFET product family with new 1200V solutions. The new SiC ...
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Cree Added Two New Discrete 650V Silicon Carbide Rectifiers
May 19, 2014Cree Inc of Durham, NC, USA has added two new discrete 650V silicon carbide (SiC) rectifiers to its Z-Rec Schottky diode portfolio. Fabricated using Cree’s SiC technology, the C5D50065D and CVFD20065A are claimed to deliver ultrafast ...
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MIT Has Demonstrated GaN Vertical Schottky and P-N Diodes
May 7, 2014Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...
Tags: GaN, MOCVD, Gallium Nitride Diodes
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Researchers Has Developed a Gallium Nitride MOSHEMT
Nov 26, 2013A Korea/USA team of engineering researchers has developed a gallium nitride (GaN) metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) with embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Semicond. Sci. ...
Tags: GaN Transistors, Embedding
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Microsemi Expanded Its Silicon Carbide Schottky Diode Product Family
Oct 16, 2013Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has expanded its silicon carbide (SiC) Schottky diode product family with a new line of 650V solutions, ...
Tags: Electrical, Electronics
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CREE Licenses Gan Device Patents License Agreement with Transphorm
Aug 6, 2013, Inc., yesterday announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree's extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN ...
Tags: Cree GaN HEMT, Lights, Lighting
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Cree Has Signed a Non-Exclusive Worldwide Patent License Agreement with Transphorm
Aug 5, 2013Cree Inc of Durham, NC, USA has signed a non-exclusive worldwide patent license agreement with Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) that provides access to ...
Tags: Transphorm Cree, Electrical, Electronics
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M/A-COM Technology Has Launched Three Broadband Solderable Flip-Chip Devices
May 22, 2013M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has launched three broadband solderable flip-chip devices, namely a ...
Tags: M/A-COM, Electrical, Electronics
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GaN and SiC Power Semiconductors Is Forecast to Grow a Factor of 18
Apr 27, 2013The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
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