electron microscope articles & resources on Made-in-China.com

Monolithic Electrically Injected Microdisk Lasers on Silicon

Aug 1, 2017

Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. ...

Tags: silicon photonics, Lasers

ZEISS Enters Process Control Market

Jul 12, 2017

ZEISS Group of Oberkochen, Germany is fueling its growth strategy by expanding into the process control market. Through its new Process Control Solutions (PCS) business unit - part of the ZEISS Semiconductor Manufacturing Technology (SMT) ...

Tags: ZEISS, Control Market

Berkeley Lab-LED Team Fabricates Transistor with Record 1nm-Long Gate

Oct 12, 2016

A research team led by faculty scientist Ali Javey at the US Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) has created a transistor with a gate length (the defining dimension of a transistor) just 1nm long, ...

Tags: Berkeley Lab, transistor with record 1nm-long gate

Two-Dimensional Gallium Nitride with Graphene Encapsulation

Sep 28, 2016

Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...

Tags: 2D GaN, graphene encapsulation, SiC

Terahertz Quantum Cascade Laser Output Power in CW Mode Almost Doubled to 0.23W

Aug 2, 2016

By optimizing the material growth and manufacturing process, researchers at the China Academy of Engineering Physics' Research Center of Laser Fusion and the Institute of Applied Physics and Computational Mathematics in Beijing have nearly ...

Tags: Cascade Laser, ceramics

Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate

Apr 29, 2016

Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...

Tags: GaN devices, Silicon Substrate

ORNL-Led Group Grows Aligned Monolayers of Lattice-Mismatched Semiconductors

Apr 21, 2016

Led by the Department of Energy's Oak Ridge National Laboratory (ORNL), a group of researchers has synthesized a stack of atomically thin monolayers of two lattice-mismatched semiconductors (Xufan Li et al, 'Two-dimensional GaSe/MoSe2 ...

Tags: Metal dichalcogenide heterostructure

Gallium Arsenide on V-Groove Silicon Template for Photonics and Electronics

Apr 15, 2016

Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...

Tags: InAs quantum dot microdisk lasers InAs GaAs substrates

Gallium Nitride Nano-Sized LEDs

Apr 11, 2016

In 2014, the Nobel Prize in physics was awarded for the discovery of the gallium-nitride-based blue-light LED and its use for new, efficient LED-based white lamps. The development efforts in this field, however, do not stop there. The ...

Tags: LED, Nobel Prize

Direct Growth Of III-V Quantum Dot Lasers On Silicon Substrate

Mar 15, 2016

Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...

Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE

Scandium Nitride Buffer for Gallium Nitride on Silicon Applications

Dec 8, 2015

Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...

Tags: GaN devices, microscope

Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes

Dec 2, 2015

Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...

Tags: GaN-on-silicon LEDs, Plessey MOCVD

II-VI Semiconductor Green Laser Diode Achieves Lower Current Threshold

Nov 9, 2015

Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...

Tags: laser diodes, zirconium dioxide

KTH-Royal Institute Create Heterojunctions Consisting of N-InP and P-Type Silicon

Jun 16, 2015

KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...

Tags: corrugated epitaxial, silicon

A Low-Temperature PAMBE Process for Direct Growth of InGaN on Silicon Substrates

Mar 24, 2015

Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...

Tags: PAMBE GaN InN InGaN Silicon substrate

electron microscope

Related Products