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electron microscopy
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Integrating InGaAs Well in Ridges on 300mm Silicon
Sep 29, 2016Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
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Indium Gallium Nitride Laser Diode Directly Integrated with Silicon
Sep 9, 2016Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
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Subwavelength Micro-Disk Lasers on Exact (001) Silicon Substrate
Jun 23, 2016Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
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ORNL-Led Group Grows Aligned Monolayers of Lattice-Mismatched Semiconductors
Apr 21, 2016Led by the Department of Energy's Oak Ridge National Laboratory (ORNL), a group of researchers has synthesized a stack of atomically thin monolayers of two lattice-mismatched semiconductors (Xufan Li et al, 'Two-dimensional GaSe/MoSe2 ...
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Demonstration of Novel High-Efficiency Blue LEDs on Silicon Substrates
Apr 6, 2016Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...
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Low-Threshold Yellow Laser Diodes
Dec 21, 2015Yellow laser diodes with low thesholds have been produced by Jijun Feng (University of Shanghai for Science and Technology, China) and Ryoichi Akimoto (National Institute of Advanced Industrial Science and Technology (AIST), Japan) based on ...
Tags: Yellow lasers BeZnCdSe 560-590nm lasers, Ryoichi Akimoto, Electronics
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Tokyo Institute of Technology Researchers Unravel Ferroelectric Properties in HfO2 Thin Films
Nov 12, 2015Ferroelectric materials have applications in next-generation electronics devices from optoelectronic modulators and random access memory to piezoelectric transducers and tunnel junctions. Now researchers at Tokyo Institute of Technology ...
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Graphene Characterization at CPI
Nov 11, 2015As part of the Graphene Applications Innovation Centre, CPI is bringing together specialist dispersion characterization, and applications testing capability alongside a team of leading scientists with a vast array of experience in industry, ...
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Improving Performance of Magnesium Doping for P-Type Gallium Nitride
Sep 16, 2015Taiwan's National Tsing Hua University has been studying ways to improve the performance of p-type gallium nitride (p-GaN) in terms of hole density and contact resistance with nickel/gold [Bo-Sheng Zheng et al, J. Appl. Phys., vol118, ...
Tags: nickel caps, Diodes, Electronics
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Plasma Pre-Treatment for Gallium Nitride Chemical Mechanical Polishing
Sep 1, 2015Osaka University in Japan has developed a plasma pre-treatment for chemical mechanical polishing (CMP) on gallium nitride (GaN) that avoids creating enlarged etch pits [Hui Deng et al, Appl. Phys. Lett., vol107, p051602, 2015]. Surface ...
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ORNL Combine a Novel Synthesis Process with Commercial Electron-Beam Lithography Technique
Jul 27, 2015The US Department of Energy's Oak Ridge National Laboratory (ORNL) has for the first time, it is claimed, combined a novel synthesis process with commercial electron-beam lithography techniques to produce arrays of semiconductor junctions ...
Tags: electronics, semiconductor, Heterojunctions
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Researchers in USA and Saudi Arabia Producing 610nm-Wavelength Red Lasers
May 4, 2015Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires (NWs) grown on silicon [Shafat Jahangir et al, Appl. Phys. Lett., vol106, p071108, 2015]. With a view to plastic fiber optical ...
Tags: plastic fiber, Electronics
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Cambridge University Chooses Veeco's Propel MOCVD System
Apr 21, 2015Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...
Tags: GaN-on-Si, Power Electronics, LEDs
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Anvil and Cambridge Centre for GaN Grown Cubic GaN on 3c-Sic on Silicon Wafers
Dec 12, 2014Anvil Semiconductors Ltd of Coventry, UK and the Cambridge Centre for GaN (part of University of Cambridge’s Department of Materials Science and Metallurgy) have grown cubic GaN on 3C-SiC on silicon wafers by metal-organic chemical ...
Tags: green LEDs, silicon wafers, Electrical
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ILT of Aachen Develops an Analysis Technology For GaN
Nov 17, 2014The Fraunhofer Institute for Laser Technology ILT of Aachen, Germany has worked with RWTH Aachen University’s Institute of Physics (IA) to develop an analysis technology that, for the first time it is claimed, allows the structural ...
Tags: LED light, Laser system
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