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Indium Gallium Nitride Solar Cells with Positive Temperature Coefficient
Sep 20, 2016Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient
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Indium Gallium Nitride Laser Diode Directly Integrated with Silicon
Sep 9, 2016Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
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Subwavelength Micro-Disk Lasers on Exact (001) Silicon Substrate
Jun 23, 2016Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
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Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate
Apr 29, 2016Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
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Silicon Dioxide Charge Inverter Boosts Hole Injection in IngaN LEDs
Apr 21, 2016Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
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Aixtron's AIX G5+ C Qualified for Manufacturing of High-Voltage GaN-on-Si Materials in Joint Project with Imec
Apr 19, 2016Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that its G5+ C multi-wafer batch metal-organic chemical vapor deposition (MOCVD) platform has been qualified for the manufacturing of specific buffer layers as ...
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Gallium Arsenide on V-Groove Silicon Template for Photonics and Electronics
Apr 15, 2016Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
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LED Display Seems to Have Entered a Season
Dec 11, 2015LED display seems to have entered a season, LED display showing how future development will be a trend yet. Many in the industry for the future development of LED display some analysis, if so, you can based on the actual LED display dealer ...
Tags: LED Display, LED industry, Chipshow
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Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes
Dec 2, 2015Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
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Ultraviolet Photodetectors on Free-Standing Gallium Nitride
Dec 2, 2015Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...
Tags: AlGaN, Ultraviolet photodetectors, HVPE
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Reducing Current Leakage in Aluminium Gallium Nitride Transistors on Silicon
Nov 27, 2015Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
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Forward-Bias Gate Breakdown in HEMTs with Enhancement-Mode P-Gan Gate
Sep 14, 2015Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
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Efficient Combination of Quantum Cascade Laser and Detectors
Sep 11, 2015Technische Universit Wien (TU Wien) in Austria has improved its bi-functional 6.8μm quantum cascade laser and detector (QCLD) technology [Benedikt Schwarz et al, Appl. Phys. Lett., vol107, p071104, 2015]. It is hoped that monolithic ...
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High-Pressure Anneal for Indium Gallium Arsenide Transistors
Aug 10, 2015Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
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Researchers in China and Hong Kong Have Claimed The Highest Output Power Density
Jul 13, 2015Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
