Researchers in USA and Saudi Arabia have been exploring the potential of using 'van der Waals epitaxy' (vdWE) to grow gallium arsenide (GaAs) on silicon [Yazeed Alaskar et al, Adv. Funct. Mater., published online 26 August 2014]. The team ...
Researchers in Taiwan have produced zinc oxide/gallium nitride (ZnO/GaN) nano-rod light-emitting diodes [Ya-Ju Lee et al, APL Mater. vol2, p056101, 2014]. The researchers avoided complicated polymer processing by using a shadowing effect to ...
Tags: LED Fabrication, Zinc Oxide
Researchers in Taiwan have produced indium gallium arsenide (InGaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with low interface trap densities directly on silicon [Yueh-Chin Lin etal, Appl. Phys. Express, vol7, p041202, 2014]. InGaAs ...
Fangliang Gao and Guoqiang Li of South China University of Technology have developed a technique to grow high-quality indium gallium arsenide (InGaAs) on gallium arsenide substrates using an ultrathin amorphous buffer [Appl. Phys. Lett., ...
Researchers in France have developed a technique to directly grow graphene on aluminium nitride (AlN) crystalline templates on silicon substrates [A. Michon et al, Appl. Phys. Lett., vol104, p071912, 2014]. Up to now, attempts to use ...
Tags: Electrical, Electronics
The Atomic Force Microscope (AFM), which uses a fine-tipped probe to scan surfaces at the atomic scale, will soon be augmented with a chemical sensor. This involves the use of a hollow AFM cantilever, through which a liquid - in this case ...
Tags: Chemical Sensor, Consumer Electronics, Electronics, Sensor
Following its first series of seminars in India (in Bangalore) in 2012, UK-based equipment maker Oxford Instruments has completed its second series of seminars. Focussed on nanotechnology tools and their use in multiple fields, more than ...
Tags: OIPT, Oxford Instruments, Nanotech Seminars
Researchers at University of California Santa Barbara (UCSB) have used low-temperature metal-organic chemical vapor deposition (MOCVD) of p-type gallium nitride (GaN) to achieve intentional surface roughening of a solar cell device, thereby ...
Tags: Ingan Solar Cell, MOCVD
University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
Anasys Instruments is proud to announce the nanoIR2, a second generation AFM based IR spectroscopy (AFM-IR) platform. A key breakthrough is the ability of the nanoIR2 to operate with top-side illumination, eliminating the prior need to ...
Tags: Anasys Instruments, NanoIR2
UK-based etch, deposition and growth system maker Oxford Instruments is planning two seminars this year in India. BTNT 2013 will be held at Mohali (29 November) in association with "Indian Institute of Science Education and Research ...
Tags: OIPT Etch, Electrical, Electronics
Researchers in China have been developing nanopatterned-sapphire substrates (NPSS), achieved with nano-sphere lithography (NSL), as a basis for the production of superior aluminium gallium nitride (AlGaN) semiconductor material for deep ...
Tags: DUV LEDs, LED, Electrical, Electronics
Park Systems Corp, headquartered in Suwon, Korea, has introduced the Park NX-HDM, a fully automated automatic defect review and sub-angstrom surface roughness atomic force microscopy (AFM) system for device substrates and disk media. ...
Tags: Park Systems, AFM System, Semiconductor
Holden, the Australian subsidiary of US automaker General Motors (GM), has started the production of the VF Commodore Calais V sedan at Holden Vehicle Operations in Adelaide suburb of Elizabeth, South Australia. The sedan is powered by a ...
AlN crystal maker CrystAl-N GmbH of Fürth, Germany says it is now moving from production of 1-inch to 2-inch AlN and accepting pre-orders. According to the firm, which was founded in 2010 as spin-off of Friedrich-Alexander-University ...
Tags: UV LEDs, Electrical, Electronics