Specifications for the Mercedes-Benz S500 Plug-in Hybrid have been officially released ahead of its debut at the Frankfurt motor show on September 10. As revealed to CarAdvice at the Mercedes-Benz S-Class international launch in July, the ...
Tags: Mercedes-Benz, Plug-in Hybrid
Germany-based researchers claim a record on-current for an enhancement-mode (e-mode) gallium nitride (GaN) metal insulator semiconductor heterostructure field-effect transistor (MISHFET) on silicon (Si) substrate [Herwig Hahn et al, Jpn. J. ...
Tags: Electrical, Electronics, E-Mode
Researchers at Purdue and Harvard universities have developed gallium arsenide (GaAs) enhancement-mode (E-mode) surface/n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a maximum drain current of 336mA/mm, which ...
Tags: NMOSFETs, GaAs, GaAs transistor ALE
British sports car manufacturer McLaren Automotive is planning to unveil the new P1 hybrid supercar at the upcoming 2013 Geneva International Motor Show to be held in Switzerland during 07-17 March 2013. The new plug-in hybrid sports ...
Tags: McLaren, P1 Hybrid Sports Car
EPC launches WiTricity demo system featuring high-frequency eGaN FETs Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) ...
Tags: EPC E-mode GaN FETs, Lights, Lighting
Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
24 May 2012 EPC launches eighth brick DC-DC power converter demo board featuring eGaN FETs Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect ...
Tags: EPC E-mode GaN FETs, Lights, Lighting
RWTH Aachen University and Aixtron SE in Germany have developed a new technique to create aluminium oxide insulated gates for nitride semiconductor transistors[Herwig Hahn et al,Semicond.Sci.Technol.,vol27,p062001,2012].The method consists ...
Tags: Plasma oxidation, RWTH Aachen University, Aixtron SE, GaN