ClassOne Technology of Kalispell, MT, USA, which manufactures wet-chemical processing equipment (especially for emerging markets and other cost-conscious users of ≤200mm substrates), has sold a Solstice S8 plating system to semiconductor ...
Tags: ClassOne, TRUMPF, Gold Plating
Plasma process equipment maker Plasma-Therm LLC of St Petersburg, FL, USA has acquired a High Density Radical Flux plasma technology that enables low-temperature Bosch polymer removal. High Density Radical Flux (HDRF) was developed by ...
Tags: Plasma-Therm, plasma technology, HDRF
CS Clean Systems AG of Ismaning (near Munich) and centrotherm clean solutions GmbH & Co KG of Blaubeuren, Germany (both specialists in the treatment of exhaust gases in semiconductor and solar cell production processes) signed a memorandum ...
Innovation and technology are two factors that truly run the show when it comes to the growth of businesses, advertising and marketing and business communication. Business and brand owners are always on the lookout for newer ways to attract ...
Tags: LED video displays, LED displays
Researchers based in China and Canada have developed single-mode ridge waveguide Fabry-Perot (RW FP) laser diodes using a pair of etched trenches that are slanted to reflect out unwanted wavelengths [Xun Li et al, Appl. Phys. Lett., vol107, ...
Tags: laser diodes, packages
University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...
Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE
SPTS Technologies Ltd (an Orbotech company that manufactures etch, PVD and CVD wafer processing solutions for the MEMS, advanced packaging, LED, high-speed RF on GaAs, and power management device markets) has surpassed $1bn in cumulative ...
Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs) [Tetsuya Miyazawa et al, J. Appl. Phys., vol118, p085702, ...
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
Technische Universit Wien (TU Wien) in Austria has improved its bi-functional 6.8μm quantum cascade laser and detector (QCLD) technology [Benedikt Schwarz et al, Appl. Phys. Lett., vol107, p071104, 2015]. It is hoped that monolithic ...
Osaka University in Japan has developed a plasma pre-treatment for chemical mechanical polishing (CMP) on gallium nitride (GaN) that avoids creating enlarged etch pits [Hui Deng et al, Appl. Phys. Lett., vol107, p051602, 2015]. Surface ...
Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
The National Renewable Energy Laboratory (NREL) and University of California Santa Barbara in the USA have developed a wafer bonding technology for III-V materials and silicon (Si) using transparent conductive oxide (TCO) interlayers of ...
Tags: electronic components, semiconductor, TCO IZO Tandem solar cells
Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD