Bridgestone America has announced the opening of Biorubber Process Research Center in Mesa, Arizona, where the company is planning to develop commercially-viable source for natural rubber. The 10-acre research centre will focus on ...
The U.S. Environmental Protection Agency has awarded an environmental education grant of $81,600 to Mesa Community College for the development of a cutting-edge “Center for Urban Agriculture” program which will include a degree ...
Tags: Urban Agriculture, Agriculture
Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
Researchers from Ohio State University (OSU) and University of California–Irvine (UCI) have developed a band engineering technique to improve the results from photo-electro-chemical (PEC) etch of nitride semiconductors [Prashanth ...
China's Nanjing University of Posts and Telecommunications has improved the performance of indium gallium nitride (InGaN) light-emitting diodes (LEDs) on silicon (Si) substrate by removing the substrate from the region under the device ...
Tags: Silicon wafer, Electrical, Electronics
Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
Morgan Advanced Materials has announced new solutions in sacrificial wear layers to extend the life of alumina or beryllia electrostatic chucks (ESCs) for semiconductor, solar and LED applications. Applied as a final protective layer, the ...
Tags: Electrical, Electronics
China's Nanjing University has produced silicon carbide (SiC) avalanche photodiodes (APDs) with the lowest claimed dark count rate (DCR) at high temperatures of 150°C, compared with any other semiconductor material [Dong Zhou et al, ...
Volcom is doubling down on boot styles for fall '14. The Costa Mesa, Calif.-based brand, a division of Paris-based Kering, launched for fall '13 with a mix of sneakers, boots and slip-ons, and while the line will continue to showcase all ...
Tags: Apparel, Shoes, Sporting Goods
Researchers based in Singapore and Turkey have demonstrated a last quantum barrier (LQB) structure for indium gallium nitride (InGaN) light-emitting diodes (LEDs) that improves the electron blocking and hole injection of an aluminium ...
Tags: LEDs GaN InGaN MOCVD, Electrical, Electronics, LED
Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...
Tags: GaN, MOCVD, Gallium Nitride Diodes
Taiwan's National Tsing Hua University has claimed the highest optical 3dB modulation bandwidth of ~463MHz at 50mA for a 500nm-wavelength blue-green indium gallium nitride (InGaN) LED [Chien-Lan Liao et al, IEEE Electron Device Letters, ...
Tags: blue-green LEDs, taiwan, LED, LED light, Electrical, Electronics
UNIQLO, the global clothing retailer, announced that it will continue its expansion in the U.S. by opening five new stores in Los Angeles. These new stores will mark the brand's first stores in the Los Angeles area. The new UNIQLO ...
Tags: UNIQLO, New Stores
Singapore's Nanyang Technological University has developed conventional aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) with record-breaking figures-of-merit (FOMs) for frequency and breakdown performance [Kumud ...
Tags: Electrical, Electronics