17 September 2012 Arsenide nanowires on graphite and graphene Researchers at Norwegian University of Science and Technology(NTNU)have succeeded in growing gallium arsenide(GaAs)and indium arsenide(InAs)compound semiconductor crystal ...
Tags: GaAs Nanowires, Solar Cells LEDs, Graphitic Substrates, Graphene
Austrian provider of chemical and plastics solutions Borealis has announced the launch of a new polypropylene (PP) grade, Bormod BH381MO to support manufacturers of industrial packaging pails in meeting their growing sustainability goals. ...
Tags: Pail Producers, Pp Grade, chemical and plastics solutions
Milliken is set to introduce its new clarifying agent for polypropylene (PP) Millad NX 8000, which lets processors produce parts with better optics at lower processing temperature and shorter cycle times. According to the company, the new ...
Tags: Pp Clarification, Nucleation, Converter
Researchers based in France and Germany have developed techniques for growing indium arsenide (InAs) channel structures on silicon [L. Desplanque et al, Appl. Phys. Lett., vol101, p142111, 2012]. Room-temperature mobility for the epitaxial ...
Tags: growing indium arsenide, InAs, chemicals
Austrian chemical and plastics solutions provider Borealis has announced the launch of the new transparent polypropylene (PP) grade, Borpact SH950MO for the frozen food packaging sector. Borpact SH950MO, which is based on Borealis ...
Chemical and plastics solutions provider in Austria, Borealis has launched new polypropylene (PP) grade BorPure RF490MO for transparent and non-opaque colored closures. The grade offers a stiffness/impact balance with transparency and ...
Tags: Borealis, polypropylene grade, closure
Innovation company Milliken will demonstrate innovations, which focus on the sustainability and pertain to product quality challenges faced by plastics processors and brand owners in the emerging markets of Eurasia, at Plast Eurasia 2012. ...
National Chung Hsing University in Taiwan has developed a simple silane treatment to improve crystal quality/internal quantum efficiency (IQE) and light extraction in nitride semiconductor light-emitting diodes (LEDs) [Chung-Chieh Yang et ...
Tags: LED
Singapore researchers report "for the first time" the DC and microwave characteristics of submicron-gate aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on 8-inch (200mm) diameter Si(111) ...
Tags: MOCVD
Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
Taiwan researchers have achieved a reduction in luminous efficiency droop from 42%to 7%by inserting p-type indium gallium nitride(p-InGaN)between the active light-emitting and electron-blocking layers of a nitride semiconductor ...
Researchers in Switzerland and the USA have reported the first large-signal performance for a gallium nitride on silicon(GaN-on-Si)high-electron-mobility transistors with output power density of 2W/mm and associated peak power-added ...
Tags: GaN/Si, HEMTs, high-electron-mobility transistors, frequency performance
Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
Recently, the Samsung Advanced Institute of Technology and Seoul National University have made an announcement that the first LEDs to be fabricated on amorphous glass substrates. As we know, manufacturers may peffer to improve GaN LEDs on ...
Tags: Market View, led