Germany's Azzurro Semiconductors AG has reported uniformity measurements for indium gallium nitride (InGaN) light-emitting diodes on large-diameter silicon substrates up to 200mm [Andrea Pinos, etal, Appl. Phys. Express, vol6, p095502, ...
Tags: InGaN Silicon substrates, LED, Electrical, Electronics
Jimei University in China has used indium gallium nitride (InGaN) p-type contacts to increase light output power by 45% over a reference device [Wang Min-Shuai and Huang Xiao-Jing, Chin. Phys. B, vol. 22, p086803, 2013]. The researchers ...
Tags: InGaN LEDs MOCVD, LED, Electrical, Electronics
Researchers from the universities of California Santa Barbara (UCSB) and of New Mexico (UNM) have demonstrated semipolar nitride semiconductor blue and green laser diodes (LDs) with part of the upper cladding replaced by indium tin oxide ...
Tags: Iii-Nitride Lasers, Electrical
Germany-based researchers claim a record on-current for an enhancement-mode (e-mode) gallium nitride (GaN) metal insulator semiconductor heterostructure field-effect transistor (MISHFET) on silicon (Si) substrate [Herwig Hahn et al, Jpn. J. ...
Tags: Electrical, Electronics, E-Mode
Researchers in South Korea and USA have been developing graded-composition superlattice electron-blocking layers (GSL-EBLs) for nitride semiconductor light-emitting diodes (LEDs) [Jun Hyuk Park et al, Appl. Phys. Lett., vol103, p061104 ...
Tags: LED, droop GaN EBL, Electrical, Electronics, nitride semiconductor
Researchers based in the USA and Korea have found "an unequivocal correlation between the onset of high injection and the onset of the efficiency droop" of gallium indium nitride (GaInN) light-emitting diodes (LEDs) [David S. Meyaard et al, ...
Tags: LED, Nitride LED, Electrical, Electronics
Researchers based in Belgium have developed gold-free nitride semiconductor Schottky barrier diodes (SBDs) on 200mm-diameter silicon to complement metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) previously ...
Tags: Barrier Diodes, Electrical, Electronics
Researchers in China have used laser micromachining to boost light extraction efficiencies of nitride semiconductor light-emitting diodes (LEDs) by up to 46% [Bo Sun et al, J. Appl. Phys., vol113, p243104, 2013]. The team was based at ...
Tags: LED, Laser Sculpting, Electrical, Electronics
Researchers in China have been developing nanopatterned-sapphire substrates (NPSS), achieved with nano-sphere lithography (NSL), as a basis for the production of superior aluminium gallium nitride (AlGaN) semiconductor material for deep ...
Tags: DUV LEDs, LED, Electrical, Electronics
Peking and Xidian universities have jointly developed a self-terminating gate recess etch that allows them to produce aluminium gallium nitride (AlGaN) normally-off metal-oxide-semiconductor field-effect transistors (MOSFETs) with positive ...
Tags: Electrical, gate recess etch
Northwestern University's Center for Quantum Devices has developed a suface-plasmon (SP) enhancement technique for ultraviolet (UV) light-emitting diodes (LEDs) produced on silicon substrates [Chu-Young Cho et al, Appl. Phys. Lett., vol102, ...
Tags: UV-LEDs, Electrical, Electronics
Chinese Academy of Sciences’ Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) has extended its work on double-gated nitride semiconductor high-electron-mobility transistors (DG-HEMTs) [Guohao Yu et al, IEEE Electron Device ...
Tags: Nitride HEMTs, Electrical
Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Taiwan National Tsing Hua University has been studying ways to improve the modulation performance of high-output-power nitride semiconductor light-emitting diodes (LEDs) [Chien-Lan Liao et al, IEEE Electron Device Letters, published online ...
Tags: GaN InGaN LEDs, LED, Electrical, Electronics, taiwan