China's magnesium product exports are expected to dip 8% year on year to around 400,000 mt in 2015, Chinese magnesium trade platform Northeast Asia Magnesia Material Trading Center said in a report on its website Tuesday. The country's ...
Tags: magnesium product, magnesium ingot
SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has launched an atomic layer deposition (ALD) system focusing on gate oxide ...
A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with ...
Tags: GaN p-n junction diodes, GaN Power Switches, solid-state lighting
Heidelberger Druckmaschinen will be exhibiting the digitized future of the print media industry under the motto "Simply Smart". At its heart, this topic is about the pressing need for print shops to continuously improve their efficiency ...
Tags: Printing Solutions, Drupa 2016
Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...
Tags: GaN devices, microscope
The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...
Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...
Tags: AlGaN, Ultraviolet photodetectors, HVPE
Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
The main obstacle that currently blocks mass-market acceptance of LED lighting, both domestically and commercially, is widespread lack of understanding and knowledge to make qualified purchasing decisions. That is all set to change, ...
Swiss confectionery company Barry Callebaut has launched Horizons range of sustainable cocoa and chocolate products. These sustainable products are part of an initiative which is aimed at improving the livelihoods of cocoa farmers and ...
Tags: Barry Callebaut, Cocoa, Chocolate
Japan's Panasonic Corp has reported the suppression of current collapse up to 800V for a normally-off gallium nitride (GaN) transistor by embedding a hybrid drain in a gate-injection transistor (HD-GIT) structure [Kenichiro Tanaka et al, ...
Tags: Panasonic, GaN transistor, AlGaN
LG Display announced Monday it will be channeling future resources to the development of OLED TVs to stay ahead of Chinese competitors that are catching up rapidly in the LCD sector, reported Associated Press. The Apple supplier said it ...
Tags: LG Display, OLED, LCD market
Research reported in Applied Physics Express (APEX) by Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan describe the development of ‘vertically orientated’ GaN-based ...
The mid-IR laser market is relatively small when compared to the total laser market, but it is growing almost four times faster than the laser market as a whole, according to market analyst Strategies Unlimited. This growth is driven by ...
Tags: MiD-IR Laser, Total Laser Market, Growing
The mid-IR laser market is relatively small when compared to the total laser market, but it is growing almost four times faster than the laser market as a whole, according to market analyst Strategies Unlimited. This growth is driven by ...
Tags: MiD-IR Laser, Total Laser Market, Growing