LED lighting is forecast to become an $80 billion dollar industry by 2020 and the market for epitaxial wafers (epi-wafers) will grow to $4 billion, according to new research. A survey of LED wafer manufacturers carried out by Lux ...
Tags: LED lighting, LED chips, LED, Lights
As LED lighting becomes an $80bn industry, the market for the epitaxial wafers that LEDs are made from will grow to $4bn in 2020, according to Lux Research. The vast majority of these epiwafers are currently gallium nitride ...
Tags: LEDs, Epiwafers, LED Lighting
Devices with wide-bandgap semiconductors will offer the greater competitive advantage in micro-inverters and small string inverters, reckons market analyst firm Lux Research. Wide-bandgap semiconductors – specifically, silicon ...
Tags: inverters, Electrical, Electronics
Integra Technologies Inc (ITI) of El Segundo, CA, USA, which makes high-power pulsed RF transistors, has developed two gallium nitride on silicon carbide (GaN-on-SiC) devices - the IGN1011M675 and the IGN1011M1200 - targeted at the L-band ...
Tags: GaN-on-SiC Devices, Integra
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, cable TV and industrial & scientific markets, has fully qualified its NPT1015 ...
Tags: RF Power Transistor, Nitronex
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes – to be displayed in ...
Tags: TriQuint, Electrical, Electronics
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM Tech, Power Transistor, Electrical
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has launched its Avionics & Radar Tech Hub, a micro-website featuring the latest news, innovations and new products related to avionics and radar applications. The ...
Tags: avionics applications, radar applications, GaN transistors
Integra Technologies Inc of El Segundo, CA, USA, which supplies high-power pulsed RF transistors, says that its new IGN0110UM100 is a dual-lead packaged gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor ...
Tags: Integra GaN-on-SiC HEMT, high-power pulsed RF transistors
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has received a$2.7m contract from the Defense Advanced Research Projects Agency(DARPA)to triple the power handling performance of ...
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits, FPGAs and customizable SoCs, and subsystems) has expanded its family of radio-frequency transistors based on gallium ...
Tags: Microsemi, GaN on SiC, radio frequency transistors, HEMT
In conjunction with the Defense Manufacturing Conference (DMC) in Orlando, FL (26-29 November), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced what it claims is ...
Tags: TriQuint GaN-on-SiC, Triquint
RF Micro Devices Inc of Greensboro,NC,USA has been awarded a$2.1m contract from the US Defense Advanced Research Projects Agency(DARPA)to enhance the thermal efficiency of gallium nitride(GaN)circuits used in high-power radar and other ...
Tags: RFMD, GaN technology, DAPPA, NJTT, military system
Cree Inc of Durham,NC,USA has launched a 40V,0.25µm,GaN-on-SiC HEMT process die product family,with power and bandwidth capabilities through the Ku-band that enables the replacement of travel-wave tubes with solid-state ...
Tags: Cree, GaN-on-SiC, HEMT, Amplifier