Ohio State University (OSU) has used polarization engineering to create low-resistance tunnel junctions in gallium nitride (GaN)-based structures [Sriram Krishnamoorthy et al, Appl. Phys. Lett., vol102, p113503, 2013]. Such junctions could ...
Tags: GaN, InGaN, semiconductor
AIXTRON SE announced that China’s Peking University is adding to its AIXTRON equipment base with an order for a further Close Coupled Showerhead (CCS) reactor with capacity for three 2-inch (3x2”) substrates in a single run. The ...
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in Q2/2012 China's Peking University ordered a further Aixtron Close Coupled Showerhead (CCS) reactor with capacity for three 2-inch (3x2") substrates in a single run. ...
The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
A major challenge of in-situ metrology on single-port reactors with small viewport geometries is the combination of curvature measurements (by blue laser) with reflectance measurement at a wavelength of 405nm, says LayTec AG of Berlin, ...
Tags: LayTec, blue laser, reflectance measurement
At the SEMICON China show in Shanghai next week (19-21 March), Shanghai-based dielectric and through-silicon via (TSV) etch tool supplier Advanced Micro-Fabrication Equipment Inc (AMEC) is making its solid-state lighting (SSL) market debut ...
Tags: MOCVD, Electrical, Electronics
South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...
Tags: Diode, semiconductor device, semiconductor
South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...
Tags: Diode, semiconductor device, semiconductor
Researchers in China and Canada have developed air-bridge field plates for nitride semiconductor high-electron-mobility transistors (HEMTs) that increase the breakdown voltage and offer more stable performance at raised temperatures [Xie ...
University of Notre Dame (UND) in the USA and epiwafer maker IQE have claimed record-breaking balanced frequency performance for a nitride semiconductor high-electron-mobility transistor (HEMT) using indium aluminium gallium nitride ...
Researchers in Korea have used aluminium gallium nitride (AlGaN) heterostructures similar to high-electron-mobility transistors (HEMTs) to create Schottky barrier diodes (SBDs) with increased forward current without damaging the breakdown ...
Tags: aluminium gallium nitride, AlGaN, heterostructures, HEMTs
Researchers in the USA have developed radio frequency switches based on nitride semiconductor voltage-controlled capacitors (varactors) [F. Jahan et al, IEEE Electron Device Letters, 9 January 2013]. The team, consisting of engineers from ...
Tags: radio frequency switches, nitride semiconductor voltage, SET
NTT Basic Research Laboratories in Japan has used hexagonal boron nitride (h-BN) layers to release nitride semiconductor light-emitting diodes (LEDs) from sapphire and transfer them to commercially available adhesive tape [Toshiki Makimoto ...
Tags: LED
Seoul National University and Korea Electronics Technology Institute have been developing hafnium dioxide (HfO2) as a gate insulator for aluminium gallium nitride (AlGaN) metal-oxide-semiconductor high-electron-mobility transistors ...
Tags: HfO2, gate insulator, Lights, Lighting
Researchers in Singapore claim the first DC and microwave performance measurements for 0.15μm-gate aluminium gallium nitride(AlGaN)on gallium nitride high-electron-mobility transistors(HEMTs)on silicon substrates with gold-free ...