Two Yale University researchers have developed epitaxial distributed Bragg reflectors (DBRs) in nitride semiconductors with reflectivities of more than 98% [Danti Chen and Jung Han, Appl. Phys. Lett., vol101, p221104, 2012]. Further, the ...
Source: Toshiba Toshiba’s white LED package Toshiba Corporation will begin mass production of white LEDs on 200mm silicon wafers this month based on technology that it licensed and developed with Californian firm Bridgelux. ...
Tags: Toshiba, Lighting, Gan on Si Led, Lights
After experiencing a boon in 2010, the weak LED market reaction in 2011 did not allow the global LED manufacturing production to grow as expected. Capacity utilization reached a low due to the fast capacity expansion and slower market ...
Tags: LED market, china LED
Plessey Semiconductors Ltd of Plymouth, UK has won the Solid-State Lighting Application Category of the Elektra Awards 2012 for its new MAGIC (Manufactured on GaN ICs) High Brightness LEDs (HB-LEDs). The winners were announced at the ...
Tags: standard silicon substrates, sapphire, silicon carbide, industry standard
Current bright blue LEDs are based on the wide band gap semiconductors GaN (gallium nitride) and InGaN (indium gallium nitride). They can be added to existing red and green LEDs to produce the impression of white light, though white LEDs ...
Toshiba Corporation today announced that the company will start sales of white light-emitting diode (LED) packages that offer makers of general purpose and industrial LED lighting solutions a cost-competitive alternative to current LED ...
Tags: LEDs Lighting, Toshiba, Lights, Mass Production
Toshiba Corporation announced that the company will start sales of white light-emitting diode (LED) packages that offer makers of general purpose and industrial LED lighting solutions a cost-competitive alternative to current LED packages. ...
Tags: Japan Toshiba Bridgelux White LED Packages, LED Package, LED CHIP
About half as many metal organic chemical vapor deposition (MOCVD) tools for gallium nitride (GaN) light-emitting diode (LED) manufacture will ship in 2012 than last year, IMS Research reports in its most recent GaN LED Quarterly Supply and ...
Tags: MOCVD
LayTec AG of Berlin, Germany (which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications) says that at last October’s International Workshop on Nitride ...
Tags: LayTec AG, metrology systems, HEMT
AZZURRO Semiconductors, a pioneer and leader in GaN-on-Si technology announces SUMITOMO Taiwan as their sole distributor partner in Taiwan. Capitalizing on the overwhelming success and customer traction, AZZURRO stepped up its ...
Tags: AZZURRO Semiconductors, GaN-on-Si, LED, Taiwan
Researchers in China have designed and constructed a two-stage 2.5-5GHz low-noise amplifier(LNA)using enhancement-mode(normally-off)aluminium gallium arsenide(AlGaAs)pseudomorphic high-electron-mobility transistors(pHEMTs)[Peng Yangyang et ...
Tags: LNA AlGaAs AlGaAs pHEMT
Electrical test instrument and system provider Keithley Instruments Inc of Cleveland, OH, USA has introduced seven instrumentation, software, and test fixture configurations for parametric curve tracing applications for characterizing high ...
The companies today jointly confirmed achieving GaN-on-Si based LEDs utilizing Epistar's high-brightness LED structures and AZZURRO's patented technology for 150 mm GaN-on-Si. The successful completion of the joined project confirmed the ...
AIXTRON SE announced a new MOCVD system order from existing customer Jilin University China.The contract is for one CCS reactor in a 3x2-inch wafer configuration,which will be dedicated to the growth of gallium nitride materials for UV and ...
Tags: AIXTRON, SE, Jilin, University, CCSreactor
18 October 2012 GaN Systems expands to new US office GaN Systems Inc of Ottawa,Ontario,Canada,which is a fabless provider of gallium nitride(GaN)-based power switching semiconductors for power conversion and control applications,has ...
Tags: GaN Systems, gallium nitride, industry