Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC9065, a development ...
Tags: Wireless Power, EPC
GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has extended its global product sales coverage and added technical ...
Tags: GaN Systems, semiconductors
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, together with the Centre for Power Electronics of the UK's ...
Tags: GaN Systems, power electronics
North Carolina State University (NCSU) has discovered a new phase of boron nitride (Q-BN) that has potential applications for both manufacturing tools and electronic displays. The researchers have also developed a new technique for creating ...
Tags: cubic boron nitride, Boron Nitride
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2040 power transistor, ...
Tags: Transistor, power transistor
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has expanded its video library on GaN ...
Tags: EPC, E-mode GaN FETs, GaN-on-Si
Researchers in France believe they have made preliminary steps towards establishing a silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) platform for quantum information processing. Quantum information processing ...
Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) for use in base transceiver stations (BTS) operating in the 3.5GHz band of fourth generation (4G) mobile ...
Tags: Mitsubishi Electric, GaN HEMT, Electronics
A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with ...
Tags: GaN p-n junction diodes, GaN Power Switches, solid-state lighting
After the RF Power business of NXP Semiconductors N.V. was acquired by China's Jianguang Asset Management Co Ltd (JAC Capital), the newly created firm Ampleon of Nijmegen, The Netherlands has extended its portfolio of gallium nitride (GaN) ...
Tags: Ampleon, GaN RF Power Transistor, broadband
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced publication of the second ...
Tags: EPC, E-mode GaN FETs
The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...
AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...
Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Taiwan Semiconductor Manufacturing Corporation (TMSC, the ...
Tags: GaN Systems, E-mode GaN FETs, TSMC