University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
Made in gold and silver with five different gemstone options, the Ungaro ring will be available starting in November through Richline and priced between $500 and $2,000. Mountain View, Calif.--In a move that will enhance its fashion tech ...
Tags: arts, crafts, gold gemstone, silver gemstone
“It is only a matter of time before white LEDs using blue LED chips will disappear from the market,” said Shuji Nakamura at a forum on GaN technology in July organized by Nikkei Asian Review. The comment from the inventor of ...
Tags: LED chip, Blue LED, Purple LEDs
For second-quarter 2015, Rubicon Technology Inc of Bensenville, IL, USA (which makes monocrystalline sapphire substrates and products for the LED, semiconductor and optical industries) has reported revenue of $7.1m, down 51% on $14.5m a ...
Tags: Mobile Market, LED light, LED bulb
Earlier this month packaging expert Des King discussed why looks count and first impressions matter when it comes to building market share. Here, he continues his exploration of digital packaging, mobile technology, and the industry's ...
Tags: Digital Packaging, packaging
Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
China’s LED package market grew 19% Year-on-Year (YoY) to US $8.6 billion in 2014, according to LEDinside’s 2015 Global Sapphire and LED Chip Market Report. The lighting market has been the major growth momentum for the ...
Tags: LED package, LED Chip, LED products, LED applications
The National Renewable Energy Laboratory (NREL) and University of California Santa Barbara in the USA have developed a wafer bonding technology for III-V materials and silicon (Si) using transparent conductive oxide (TCO) interlayers of ...
Tags: electronic components, semiconductor, TCO IZO Tandem solar cells
Using its its proprietary modified Kyropoulos (KY) method, Monocrystal Inc of Stavropol, Russia, which manufactures large-diameter sapphire substrates and cores for LED, optical product and RFIC applications (as well as screen printing ...
Oxford Instruments says that several PlasmaPro 800 plasma-enhanced chemical vapour deposition (PECVD) systems have been ordered by China's Enraytek Optoelectronics Co for manufacturing high-brightness LEDs. Enraytek's key products are ...
Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
OEM Group of Phoenix, AZ, USA (which supplies new and re-manufactured semiconductor capital equipment and upgrades focused on emerging markets) says that a leading LED maker has placed a repeat order for an AGHeatpulse RTP (rapid thermal ...
EV Group of St Florian, Austria (a supplier of wafer bonding and lithography equipment for MEMS, nanotechnology and semiconductor applications) has unveiled the HERCULES NIL — a fully integrated track system that combines cleaning, ...
University of California Santa Barbara (UCSB) in the USA has improved hole concentrations in p-type gallium nitride (p-GaN) by using indium as a surfactant in ammonia-based molecular beam epitaxy (NH3MBE) [Erin C. H. Kyle et al, Appl. Phys. ...
Tags: Gallium Nitride, Indium Surfactant
Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride