University of California Santa Barbara (UCSB) in the USA has improved hole concentrations in p-type gallium nitride (p-GaN) by using indium as a surfactant in ammonia-based molecular beam epitaxy (NH3MBE) [Erin C. H. Kyle et al, Appl. Phys. ...
Tags: Gallium Nitride, Indium Surfactant
Just four months after the Connected Cree LED Bulb's launch in January, Cree Inc of Durham, NC, USA has announced its compatibility with home automation firm SmartThings (part of the Samsung Global Innovation Center). "Cree is committed ...
Tags: LED Bulb, Home Lighting
The European Parliament's environment and agriculture committee has voted in favor of ban on cloning of farm animals, as well as food products from both clones and their offspring in the EU. This comes in view of potential health risks ...
Tags: Food Products, Cloned Animals
Microchip Technology has announced that Kia Motors is enriching its infotainment system with powerful smart-phone connectivity in its flagship Kia K900 luxury sedan, using Microchip's OS81110 Intelligent Network Interface Controller (INIC). ...
Tags: Microchip Technology, Kia
How thin the charger treasure? 3.9 mm, the thickness of the two round coin, is about 1/3 of the apple 6. Its capacity is also good - 5000mah, suitable for mobile phones, and larger capacity of electronic devices such as tablet; and has ...
Tags: Charger
VI Systems GmbH of Berlin, Germany (a fabless spin-off of the Technical University of Berlin and the A. F. Ioffe Physico-Technical Institute in St Petersburg, Russia) has been selected by the European Commission to receive €1.97m in ...
Tags: VI Systems, SME Instrument
At the ANGA COM 2015 Exhibition & Congress for Broadband, Cable and Satellite in Cologne, Germany (9-11 June), Anadigics Inc of Warren, NJ, USA has introduced the ARA2031 reverse-path amplifier, which delivers optimized performance for ...
Tags: DOCSIS 3.1, CPE Devices
Princeton Power Systems of Princeton, NJ, USA - which designs and manufactures products for energy management, micro-grid operations and electric vehicle charging - has demonstrated for the first time a grid-tied bi-directional power ...
Tags: SiC JFETs, Power Converter
Richard Eden, senior analyst (Power Semiconductors) at market research firm IHS Technology, attended the recent PCIM (Power Conversion Intelligent Motion) Europe 2015 tradeshow in Nuremberg, Germany (19-21 May), and in a Research Note has ...
Tags: GaN SiC, Power electronics
Lumileds of San Jose, CA, USA has released LM-80 test results for its LUXEON 3535L mid-power LED line, enabling L90 fixture life of more than a decade. Completing 10,000 hours of LM-80 testing at 55C, 85C and 105C, Lumileds has exceeded ...
Tags: Lumileds, MID-Power LEDs
Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride
In booth 4D18 at PCIM (Power Conversion Intelligent Motion) Asia 2015 in Shanghai (24–26 June), GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for ...
Tags: GaN Systems, Power electronics, Transistor
Huami Co Ltd expects sales of its Xiaomi Mi Bands will reach 10 million in the third quarter, making it the largest maker of wearable fitness devices in the world. Launched last year, the Mi Band monitors fitness levels and tracks sleep ...
Tags: Wearable Devices, Fitness Devices
German automobile major Mercedes-Benz has expanded its global output network, kicking off the production of GLA compact SUV at its Pune manufacturing facility in India. In what becomes an addition to such network having Thailand, Vietnam, ...
Tags: Mercedes-Benz, GLA Compact SUV
A team at IBM Research's Zurich Research Laboratory in Rüschlikon, Switzerland, with support from the firm's T. J. Watson Research Center in Yorktown Heights, New York, has developed what it says is a relatively simple, robust and ...
Tags: IBM III-Vs-on-Si, Electrical, Electronics, IBM