Japan’s National Institute of Advanced Industrial Science and Technology (NAIST) has claimed the highest breakdown voltage to date for a diamond metal-semiconductor field-effect transistor (MESFET) [Hitoshi Umezawa et al, IEEE ...
Freescale Semiconductor today introduced a comprehensive hardware/software development system for enabling automotive grade Ethernet connectivity for next generation infotainment, instrument cluster, camera telematics and rear seat ...
Tags: Freescale, Vehicles, Accessories
Researchers at Chalmers University of Technology in Gothenburg, Sweden have designed a microwave circuit that has set a record transmission rate of 40Gb/s for an operating frequency of 140GHz (presented in the session ‘Breaking News ...
NeoPhotonics Corp of San Jose, CA, a vertically integrated designer and manufacturer of both indium phosphide (InP) and silica-on-silicon photonic integrated circuit (PIC)-based modules and subsystems for high-speed communications networks, ...
Tags: NeoPhotonics, Transceiver, Electrical
In booth 376 at the European Conference on Optical Communications (ECOC 2014) in Cannes, France (22-24 September), optical communication product maker Source Photonics Inc of Chatsworth, CA, USA is giving a live demonstration of ...
Optical communication product maker Source Photonics Inc of Chatsworth, CA, USA has announced what it claims is the first integrated, pluggable Gigiabit passive optical networks (GPON) SFP optical networking unit (ONU) with 1 ...
Tags: Source Photonics, GPON
In booth 419 at the IEEE Energy Conversion Congress & Expo (ECCE 2014) in Pittsburgh, PA, USA (14–18 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching ...
Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
South Korean LED maker Seoul Semiconductor has launched an LED light engine with Acrich3 technology, consisting of an LED module with an Acrich MJT 5050 series LED, Acrich3 IC technology, and a heat-sink and secondary optics. The Acrich ...
Tags: Seoul Semiconductor, LED Light
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that, on 3 September (at 11am-12pm ...
Google and the Institute of Electrical and Electronic Engineers’ Power Electronics Society (IEEE PELS) have launched the Little Box Challenge, an open competition with a $1m prize to create a much smaller but higher-power-density ...
Tags: inverters, GaN SiC, Power Inverter
Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
The Electric Power Research Institute (EPRI) is working to develop an open platform that would integrate plug-in electric vehicles (PEV) with smart grid technologies. EPRI is carrying out the project in partnership with eight automakers ...
Fabless semiconductor firm RFaxis Inc of Irvine, CA, USA, which designs RF semiconductors and embedded antenna solutions for wireless connectivity and cellular mobility, is unveiling a family of Nano RF products code named Nucleus. The ...
Tags: RFaxis CMOS, Electrical, Electronics
Sweden's Royal Institute of Technology (KTH) has created a monolithic operational amplifier circuit using 4H polytype silicon carbide (SiC) bipolar junction transistors (BJTs) [Raheleh Hedayati et al, IEEE Electron Device Letters, vol35, ...
Tags: SiC SiC BJTs, Electrical, Electronics