HVPE system expected to lower the cost of LED production and accelerate adoption in commercial and residential lighting GT Advanced Technologies (NASDAQ: GTAT) and Soitec (NYSE Euronext: SOI), today announced a development agreement and a ...
Soitec of Bernin, France, which makes engineered substrates including silicon-on-insulator wafers and III-V epiwafers) has announced development and licensing agreements allowing GT Advanced Technologies Inc of Nashua, NH, USA (a provider ...
Tags: HVPE System, LED, GT, LED lighting
Technologies of Santa Clara, CA, USA, which designs and makes infrared and fiber-optic temperature and gas sensing solutions, has introduced its UV 400 and UVR 400 pyrometers, the newest generation of non-contact temperature measurement ...
Tags: LumaSense, LEDs, fiber-optic temperature, gas sensing solutions
Researchers based in South Korea and France have developed gallium nitride (GaN) fin field-effect transistors (FinFETs) with the lowest claimed subthreshold swing for nitride semiconductor metal-insulator-semiconductor FETs (MISFETs) ...
AIXTRON SE announced that SukYoung Kim has been appointed General Manager of its subsidiary AIXTRON Korea Co., Ltd. Mr. Kim has been working in the international semiconductor industry in Korea and the USA for many years and most recently ...
Tags: AIXTRON SE, SukYoung Kim, General Manager, LED products
Due to rising demand for LED products from the handsets and lighting sectors, market research institutes predict the global LED market output value will reach US$12.4 billion in 2013, representing an on-year growth of 12%. However, the ...
Tags: LED products, LED lighting products, LED light sources
Soraa has developed the next generation of its high external quantum efficiency GaN on GaN LEDs, which outperform the best-documented LED laboratory result by Nichia Chemical Co. at current densities of 100 A/cm2 and beyond as described in ...
Tags: Soraa, GaN on GaN LEDs, LED laboratory
Veeco recently announced that, due to the ongoing accounting review announced on November 15, 2012, the Company is unable to report revenue and earnings information for the fourth quarter and year ended December 31, 2012. The Company will ...
Every LED maker wants to know the emission wavelength of its final device during metal-organic chemical vapour deposition (MOCVD) growth, says LayTec AG of Berlin, Germany (which makes in-situ metrology systems for thin-film processes, ...
Tags: LED maker, LED, LED structures, lighting
Deposition equipment maker Aixtron SE of Herzogenrath, Germany has appointed SukYoung Kim as general manager of its subsidiary Aixtron Korea Co Ltd. Kim has been working in the international semiconductor industry in Korea and the USA for ...
Tags: LED products, LED, semiconductors
Structured Materials Industries Inc(SMI) of Piscataway, NJ, USA, which provides chemical vapor deposition (CVD) systems, components, materials, and process development services, has announced three updated products for process control ...
Tags: CVD Computer, Distribution Box, CVD Process
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that, due to its ongoing revenue recognition accounting review announced on 15 November, it is currently unable to report revenue and earnings ...
A team at Massachusetts Institute of Technology has developed an etch stop technique to improve performance of recessed-gate nitride semiconductor metal-insulator-semiconductor field-effect transistors (MISFETs) [Bin Lu et al, IEEE Electron ...
Tags: GaN MISFET GaN MOCVD, Electronics, Etch
Researchers in China have developed an atomic layer deposition (ALD) technique to create distributed Bragg reflectors (DBR) for increasing nitride semiconductor light-emitting diode (LED) output power by up to 43% [Hongjun Chen et al, Appl. ...
Tags: DBR ALD MOCVD LEDs GaN, Lighting, LED
University of Notre Dame (UND) in the USA and epiwafer maker IQE have claimed record-breaking balanced frequency performance for a nitride semiconductor high-electron-mobility transistor (HEMT) using indium aluminium gallium nitride ...