PANalytical has announced a new detector for X-ray diffraction (XRD) at PITTCON 2015. The new GaliPIX3D will be shown on PANalytical’s flagship X-ray diffractometer, Empyrean - the flexible and future-proof multipurpose laboratory ...
Tags: PANalytical, X-ray diffraction, detector
Seren Photonics Ltd of Pencoed Technology Park, UK (which was spun off from the University of Sheffield in February 2010) has launched its next generation of semi-polar gallium nitide (GaN) on sapphire templates. This latest generation of ...
Tags: Seren, GaN-on-Sapphire
Anvil Semiconductors Ltd of Coventry, UK and the Cambridge Centre for GaN (part of University of Cambridge’s Department of Materials Science and Metallurgy) have grown cubic GaN on 3C-SiC on silicon wafers by metal-organic chemical ...
Tags: green LEDs, silicon wafers, Electrical
Researchers in USA and Saudi Arabia have been exploring the potential of using 'van der Waals epitaxy' (vdWE) to grow gallium arsenide (GaAs) on silicon [Yazeed Alaskar et al, Adv. Funct. Mater., published online 26 August 2014]. The team ...
Fukuda Crystal Laboratory Co Ltd has grown ScAlMgO4 scandium aluminium magnesium oxide (SCAM) crystal with a diameter of 50mm (2 inches) that could be used as a substrate for gallium nitride (GaN)-based light-emitting devices such as blue ...
Tags: Fukuda Crystal Lab, a diameter, Electrical
University of California Santa Barbara (UCSB) and National Taiwan University (NTU) have been optimizing ammonia-based molecular beam epitaxy (MBE) for gallium nitride (GaN) growth on a range of substrates [Erin C. H. Kyle et al, J. Appl. ...
Tags: GaN MBE Veeco, Electrical, Electronics
Researchers in Germany have developed two-dimensional hole gas (2DHG) gallium nitride (GaN) channel structures with record mobility [B Reuters et al, J. Phys. D: Appl. Phys., vol47, p175103, 2014]. Mobility for 2DHGs in GaN is usually ...
Tags: Electrical, Electronics
Researchers in Taiwan have produced indium gallium arsenide (InGaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with low interface trap densities directly on silicon [Yueh-Chin Lin etal, Appl. Phys. Express, vol7, p041202, 2014]. InGaAs ...
Fangliang Gao and Guoqiang Li of South China University of Technology have developed a technique to grow high-quality indium gallium arsenide (InGaAs) on gallium arsenide substrates using an ultrathin amorphous buffer [Appl. Phys. Lett., ...
In-situ metrology system maker LayTec AG of Berlin, Germany notes that it is known that some properties of gallium nitride (GaN)-based light-emitting quantum wells (QW) can be improved by using a-plane III-nitrides. However, during ...
Tags: LayTec Metrology, AIN Interlayers
University of Notre Dame (UND) is developing gallium nitride (GaN) quantum dots in aluminium nitride (AlN) as a route to deep ultraviolet (UV) light-emitting diodes (LEDs) [Jai Verma et al, Appl. Phys. Lett., v104, p021105, 2014]. ...
Tags: UV Light Emission, LEDs
The goal of making cheap organic solar cells may have gotten a little more approachable with a new understanding of the basic science of charge separation presented in a paper published online today, February 3, in Nature Communications. ...
Tags: Solar Cells
Research teams at the Helmholtz-Zentrum Berlin and at the University of Limerick, Ireland, have discovered a novel solid state reaction which lets kesterite grains grow within a few seconds and at relatively low temperatures. For this ...
Tags: Consumer Electronics, Electronics
A team of researchers exploring the intergranular stress corrosion cracking of a type of metallic tubing used within nuclear power plants has developed a technique to both map and predict its propagation. Metallic tubing plays a key role ...
Tags: Consumer Electronics, Electronics
Oxford Instruments is offering an upgrade option for its ALD equipment to apply a bias voltage to the substrate, adding further control of the energy at the wafer surface in order to tune the properties of the deposited film. While scaling ...