Japanese automaker Suzuki has introduced the all new Jimny 4WD minicar and compact car in the country, for the first time in 20 years. The vehicle is equipped with a 1.5L engine and its off-road functions and performances are claimed to ...
Tags: automaker, Suzuki, 4WD Vehicles
Infiniti will showcase its QX50 crossover and QX80 SUV at the upcoming 2018 Houston Auto Show to be held between January 24 and 28. The 2019 QX50 debuted at the Los Angeles International Auto Show features the first production-ready ...
Tags: Infiniti Motor, Auto Show
Pallidus Inc (a Melior Innovation company) of Houston, TX, USA has launched its proprietary M-SiC silicon carbide source material and technology platform, with the capability to deliver cost/performance parity against silicon devices in the ...
Tags: Silicon Carbide, Pallidus
Infiniti will be introducing the all new 2017 Q50 3.0t Signature Edition and the 2017 QX80 5.6 Signature Edition at Chicago Auto Show. Both models will make their public debuts at the 2017 Chicago Auto Show, which runs from Feb. 11 to 20 ...
Tokyo-based equipment maker Disco Corp has developed the KABRA (Key Amorphous-Black Repetitive Absorption) laser ingot slicing method. Implementing the process is said to enable high-speed production of silicon carbide (SiC) wafers, ...
Tags: SiC, Disco Corp, laser ingot slicing method
Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has launched an atomic layer deposition (ALD) system focusing on gate oxide ...
AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...
Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs
Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs) [Tetsuya Miyazawa et al, J. Appl. Phys., vol118, p085702, ...
North Carolina State University in the USA has developed a new edge termination technique for 4H polytype silicon carbide (4H-SiC) high-voltage devices [Woongje Sung et al, IEEE Electron Device Letters, published online 29 April 2015]. The ...
Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical
Steve Vandegrift (right) of Alliance Tire presents a $500 donation for Marshall County 4-H to Rob Augustin of UT Extension-Marshall County at Saturday’s Lions Super Pull of the South in Chapel Hill. Alliance Tire Americas Inc. ...
Tags: Alliance Tire Americas, 4H, Accessories
Sweden's Royal Institute of Technology (KTH) has created a monolithic operational amplifier circuit using 4H polytype silicon carbide (SiC) bipolar junction transistors (BJTs) [Raheleh Hedayati et al, IEEE Electron Device Letters, vol35, ...
Tags: SiC SiC BJTs, Electrical, Electronics
China's Nanjing University has produced silicon carbide (SiC) avalanche photodiodes (APDs) with the lowest claimed dark count rate (DCR) at high temperatures of 150°C, compared with any other semiconductor material [Dong Zhou et al, ...