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Suzuki Introduces New Jimny 4WD Vehicles in Japan
Jul 9, 2018Japanese automaker Suzuki has introduced the all new Jimny 4WD minicar and compact car in the country, for the first time in 20 years. The vehicle is equipped with a 1.5L engine and its off-road functions and performances are claimed to ...
Tags: automaker, Suzuki, 4WD Vehicles
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Infiniti Motor to Showcase Refreshed Suv Lineup at Houston Auto Show
Jan 24, 2018Infiniti will showcase its QX50 crossover and QX80 SUV at the upcoming 2018 Houston Auto Show to be held between January 24 and 28. The 2019 QX50 debuted at the Los Angeles International Auto Show features the first production-ready ...
Tags: Infiniti Motor, Auto Show
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Pallidus Launches M-SiC Silicon Carbide Source Material and Technology Platform
Aug 18, 2017Pallidus Inc (a Melior Innovation company) of Houston, TX, USA has launched its proprietary M-SiC silicon carbide source material and technology platform, with the capability to deliver cost/performance parity against silicon devices in the ...
Tags: Silicon Carbide, Pallidus
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Infiniti to Unveil Signature Edition Q50 Sedan and QX80 SUV
Feb 13, 2017Infiniti will be introducing the all new 2017 Q50 3.0t Signature Edition and the 2017 QX80 5.6 Signature Edition at Chicago Auto Show. Both models will make their public debuts at the 2017 Chicago Auto Show, which runs from Feb. 11 to 20 ...
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Disco Develops Laser Ingot Slicing Method to Speed Sic Wafer Production and Cut Material Loss
Aug 12, 2016Tokyo-based equipment maker Disco Corp has developed the KABRA (Key Amorphous-Black Repetitive Absorption) laser ingot slicing method. Implementing the process is said to enable high-speed production of silicon carbide (SiC) wafers, ...
Tags: SiC, Disco Corp, laser ingot slicing method
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Bi-Directional Silicon Carbide Planar Insulated-Gate Bipolar Transistor
Jul 5, 2016Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
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US Air Force Offering $13.5m Cooperative Agreement to Develop Large-Diameter SiC Substrates
Apr 6, 2016The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
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Samco Launches Ald System for Gate Oxides in Wide-Bandgap Power Devices
Dec 21, 2015SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has launched an atomic layer deposition (ALD) system focusing on gate oxide ...
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Laytec Expands Epinet Library's High-Temperature Nk Database and Real-Time Analysis for GaN/Sic-4h HEMTs
Dec 3, 2015AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...
Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs
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Increasing Carrier Lifetimes for High-Voltage Silicon Carbide
Sep 15, 2015Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs) [Tetsuya Miyazawa et al, J. Appl. Phys., vol118, p085702, ...
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a New Edge Termination Technique for 4h-Sic High-Voltage Devices Has Been Developed
May 19, 2015North Carolina State University in the USA has developed a new edge termination technique for 4H polytype silicon carbide (4H-SiC) high-voltage devices [Woongje Sung et al, IEEE Electron Device Letters, published online 29 April 2015]. The ...
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Germany Developed GaN HEMTs on Sic Layers on Silicon Wafers
Jan 5, 2015Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical
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Alliance Tire Americas Presented The Marshall County 4-H with a $500 Check July 19, 2014
Aug 18, 2014Steve Vandegrift (right) of Alliance Tire presents a $500 donation for Marshall County 4-H to Rob Augustin of UT Extension-Marshall County at Saturday’s Lions Super Pull of the South in Chapel Hill. Alliance Tire Americas Inc. ...
Tags: Alliance Tire Americas, 4H, Accessories
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Silicon Carbide Bipolar Opamp Performance at 500ºC
Aug 2, 2014Sweden's Royal Institute of Technology (KTH) has created a monolithic operational amplifier circuit using 4H polytype silicon carbide (SiC) bipolar junction transistors (BJTs) [Raheleh Hedayati et al, IEEE Electron Device Letters, vol35, ...
Tags: SiC SiC BJTs, Electrical, Electronics
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China's Nanjing University Produced SiC APDs
Jun 4, 2014China's Nanjing University has produced silicon carbide (SiC) avalanche photodiodes (APDs) with the lowest claimed dark count rate (DCR) at high temperatures of 150°C, compared with any other semiconductor material [Dong Zhou et al, ...
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