E mode articles & resources on Made-in-China.com

Researchers in China and Hong Kong Have Claimed The Highest Output Power Density

Jul 13, 2015

Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...

Tags: GaN MIS-HEMTs, PECVD ALD MOCVD

GaN Systems Launches The Latest Addition to Its Range of E-Mode GaN-on-Silicon Transistors

May 21, 2015

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched the latest addition to its range of enhancement-mode ...

Tags: GaN Systems, Power electronics

Panasonic Launched The Industry's Smallest E-Mode Gan Power Transistor

May 19, 2015

Panasonic Corp of Osaka, Japan is launching what it claims is the industry's smallest enhancement-mode (E-mode) gallium nitride (GaN) power transistor, encapsulating into an 8x8 dual-flat no-lead (DFN) 'X-GaN' surface-mount package. A ...

Tags: Panasonic, GaN Power Transistor

Infineon Announced The Expansion of Its GaN on Silicon Technology and Product Portfolio

Mar 24, 2015

At the 30th IEEE Applied Power Electronics Conference & Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Infineon Technologies AG of Munich, Germany has announced the expansion of its gallium nitride (GaN)-on-silicon technology ...

Tags: Evatec Sputtering, PVD, Electronics

Mercedes-Benz Will Launch Hybrid C 350 E Models

Feb 4, 2015

Mercedes-Benz has started taking orders for its plug-in hybrid Mercedes-Benz C 350 e vehicle. The company is offering two variants of the latest hybrid vehicle which includes €50,961.75 Saloon and Estate worth €52,627. The ...

Tags: Mercedes-Benz, Hybrid C 350

EPC Launched The EPC2027 to Achieve Higher Efficiency and Power Density

Jan 15, 2015

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2027, a 450V normally ...

Tags: medical diagnostic equipment, solar power inverters, Electrical

GaN Systems Introduces New Application Note for Design Engineers

Dec 18, 2014

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has released a new Application Note for design engineers that sets ...

Tags: Gan Systems, E-Mode Power, Switching Transistors, Electrical

Gan Power Device Market will Grow to Almost $600m

Jun 30, 2014

Based on a scenario where electric vehicles and hybrid electric vehicles (EV/HEV) begin adopting gallium nitride (GaN) in 2018-2019, the ramp-up of the GaN power device market will be quite impressive starting in 2016, at an estimated ...

Tags: Yole GaN HEMT Power electronics, Electrical, Electronics

GOMACTech 2014 Will Present Results of a Newly Released Family of eGaN HEMTs

Mar 31, 2014

At the 39th annual Government Microcircuit Applications and Critical Technology (GOMACTech 2014) conference in Charleston, SC, USA (3 April), Alex Lidow, CEO & co-founder of Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, ...

Tags: DC-DC Converter, EPC

Volkswagen Plans to Debut Its New Plug-in Hybrid System Concept Car

Nov 22, 2013

German automaker Volkswagen is set to debut its new plug-in hybrid system concept car, twin up, at the Tokyo Motor Show to be held from 23 November – 1 December 2013. The twin up is four-seater vehicle, which is claimed to offer ...

Tags: Volkswagen, Plug-in Hybrid Vehicle

HKUST Developed a 600V GaN/Si Normally-Off MIS-HEMT

Oct 16, 2013

Hong Kong University of Science and Technology (HKUST) has developed a 600V gallium nitride on silicon (GaN/Si) normally-off metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with large gate swing and low current ...

Tags: GaN MIS-HEMTs AlGaN, Electrical, Electronics

EPC Introduced Devices with a High-Lead Solder Termination for Applications

Oct 16, 2013

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced devices with a high-lead solder termination for applications requiring higher temperature solder.?The EPC2801, EPC2815, and EPC2818 feature high-lead content (95% ...

Tags: EPC E-mode GaN FETs, Electrical, Electronics

NECO Is on a Project Aimed at Lowering The Cost of Producing Gallium Nitride

Sep 5, 2013

Nanoelectronics research centre imec of Belgium and Veeco Instruments Inc. (Nasdaq:VECO) are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs. Barun ...

Tags: GaN-on-Si Devices, Power Electronics

Veeco Parters with Imec to Develop Gan-on-Si Devices for Improve It's Efficiency

Sep 5, 2013

Nanoelectronics research center Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs. “The ...

Tags: GaN-on-Si Devices, LED Applications

Veeco Has Been Instrumental in Helping Us Meet Our Development Milestones

Sep 4, 2013

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA and Belgium's imec are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si)-based power ...

Tags: LED, Power Electronics, Electrical, Electronics

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