MicroWave Technology Inc (MwT) of Fremont, CA, USA, the RF division of IXYS Corp that makes microwave devices, MMICs, hybrid modules and connecterized amplifiers for wireless communication infrastructure, military/aerospace, industrial and ...
Tags: Amplifier, Electrical, Electronics, MicroWave Technology
A transnational team of researchers has reported the first electrically pumped exciton-polariton laser device using an arsenide semiconductor microcavity [Christian Schneider et al, Nature, vol. 497, p348, 2013]. The team was variously ...
Tags: Electrical Pumping, Electrical, Electronics
Xenics nv of Leuven, Belgium - a manufacturer of infrared detectors, cameras and customized IR imaging solutions covering the spectrum from long-wavelength infrared (LWIR) to the visible (0.4–14μm) – says that on 3 May three ...
Tags: InGaAs SWIR, Proba-V Satellite
Sofradir of Paris, France, which makes infrared detectors for military, space and commercial applications, will make four presentations on advances in next-generation infrared detectors in different wavelengths from the visible to far ...
Tags: Sofradir, Generation IR Detection
Using a triple-junction III-V compound semiconductor solar cell (in which three photo-absorption layers are stacked together, Japan’s Sharp Corp has surpassed its record for energy conversion efficiency in research-level ...
Tags: Sharp, Triple-junction solar cell
Researchers at Purdue and Harvard universities have developed gallium arsenide (GaAs) enhancement-mode (E-mode) surface/n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a maximum drain current of 336mA/mm, which ...
Tags: NMOSFETs, GaAs, GaAs transistor ALE
Researchers at Arizona State University (ASU) have succeeded in developing electrically powered nano-scale lasers that operate effectively at room temperature – a step that could pave the way for their use in a variety of practical ...
National Formosa University in Taiwan has developed a liquid-phase deposition (LPD) process of textured zinc oxide on III-V semiconductor to provide improved absorption of multi-junction solar cells [Po-Hsun Lei et al, J. Phys. D: Appl. ...
Tags: ZnO, germanium solar cells, solar cells
Following a buyout initiated by local management, coordinated by industry veteran Joerg Wieland and supported by a team of European private investors, Albis Optoelectronics AG of Rüschlikon near Zurich, Switzerland (the name by which ...
Tags: Albis Enablence photodetectors, Enablence Technologies, company news
UTC Aerospace Systems of Charlotte, NC, USA (a unit of United Technologies Corp formed after its acquisition of Sensors Unlimited Inc’s parent company Goodrich Corp in early August) will release its next-generation Sensors Unlimited ...
Tags: UTC, SWIR camera, SPIE BiOS
Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
Researchers at University of Notre Dame and Kopin Corp have developed high-performance nitride semiconductor high-electron-mobility transistors (HEMTs) with indium gallium nitride (InGaN) channels [Ronghua Wang et al, Appl. Phys. Express, ...
Tags: semiconductor, high electron mobility transistors, InGaN
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
Purdue and Harvard universities have produced stacked nanowire (NW) transistors with increased drive current and maximum transconductance. The results were presented on Wednesday 12 December at the International Electron Devices Meeting ...
Tags: Christmas Tree, 4d Electronics, nanowire transistors, wrap-around gates
Hong Kong University of Science and Technology (HKUST) has grown high-performance indium gallium arsenide (InGaAs) metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) directly on silicon [Xiuju Zhou et al, ...