For fluorescence microscopy, Excelitas Technologies Corp of Waltham, MA, USA (which provides customized photonic solutions to OEMs) has added to its X-Cite product line by launching the X-Cite XYLIS light source, which offers a ...
Tags: Excelitas, Hybrid Drive Technology
CRAIC Technologies Inc of San Dimas, CA, USA has added Raman microspectroscopy to its flagship product: the 20/30 Perfect Vision microspectrophotometer. Users can now acquire Raman spectra by integrating the new Apollo II Raman ...
ProPhotonix Ltd of Salem, NH, USA, a designer and manufacturer of LED illumination systems and laser diode modules for OEMs and medical equipment companies (as well as a distributor of laser diodes for Ushio, Osram, QSI, Panasonic and Sony) ...
Tags: ProPhotonix, Integrated Optics
ZEISS Group of Oberkochen, Germany is fueling its growth strategy by expanding into the process control market. Through its new Process Control Solutions (PCS) business unit - part of the ZEISS Semiconductor Manufacturing Technology (SMT) ...
Tags: ZEISS, Control Market
Toray Plastics (America) is now offering its analytic testing of films, laminations, and finished printed structures to all consumer packaged goods companies and converters. Toray’s wide array of sophisticated lab equipment and ...
Tags: Toray Plastics, Packaging
Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...
Tags: Transistors, MOSFETs
Excelitas Technologies Corp of Waltham, MA, USA, which provides customized photonic solutions to OEMs, has expanded its OmniCure product line with a higher-power UV LED curing system for fiber optic coatings. The new OmniCure AC8225-F+ ...
Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...
Tags: 2D GaN, graphene encapsulation, SiC
Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
At the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) in Nagoya, Japan (7-12 August), analytical and imaging instrument maker Nanophoton Corp of Osaka, Japan has introduced the RAMANdrive wafer analyzer for a wide ...
Sun Chemical has opened a new coatings lab at its research and development facility in Carlstadt, New Jersey, US. The new lab will enable Sun Chemical to provide enhanced services to the graphic arts and packaging markets. Featuring ...
Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate