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PECVD
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Aixtron Provides Deposition System to EPFL for 2D Materials Research
Sep 27, 2017Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that Switzerland’s école Polytechnique Fédérale de Lausanne (EPFL) has purchased a BM NOVO system. The versatile tool, which can produce ...
Tags: 2D Materials, Deposition System
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Indium Gallium Arsenide Quantum Well Transistors on 300mm Silicon
May 18, 2017Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...
Tags: Transistors, MOSFETs
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Oxford Instruments Systems Being Used in UV LED Manufacturing
Sep 29, 2016UK-based Oxford Instruments, which provides process technology equipment for the manufacturing of high-brightness light-emitting diodes (HBLEDs), says that its systems are being used to facilitate the introduction of ultraviolet (UV) LEDs ...
Tags: Oxford Instruments, UV LED
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Samco Opens Second Production Center
Jun 20, 2016Semiconductor process equipment maker SAMCO Inc has held a completion ceremony for its second production center (a two-floor steel-framed building adjacent to the headquarters in Kyoto, Japan), which began construction in January and is ...
Tags: Semiconductor, PECVD, MOCVD
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Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate
Apr 29, 2016Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
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Silicon Dioxide Charge Inverter Boosts Hole Injection in IngaN LEDs
Apr 21, 2016Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
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Japan's SAMCO Adds Local Sales Staff for North American, European and Asian Locations
Apr 15, 2016Semiconductor process equipment maker SAMCO Inc of Kyoto, Japan is employing about 20 more people at its locations in North America, China, Taiwan and Singapore, as well as its subsidiary Samco-UCP in Liechtenstein, in order to better ...
Tags: Samco
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III-Nitride High-Electron-Mobility Transistors on Flexible Tape
Apr 11, 2016Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
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Aixtron's Revenue Grows 14% In Q4 As Diversification Outweighs LED-Related China Loss
Mar 9, 2016Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported full-year revenue for 2015 of €197.8m, up 2% on 2014's €193.8m. Contrary to expectations, San'an Optoelectronics Co Ltd (China's largest ...
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Samco Launches Ald System for Gate Oxides in Wide-Bandgap Power Devices
Dec 21, 2015SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has launched an atomic layer deposition (ALD) system focusing on gate oxide ...
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II-VI Semiconductor Green Laser Diode Achieves Lower Current Threshold
Nov 9, 2015Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...
Tags: laser diodes, zirconium dioxide
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Aixtron's Revenue Grows 35% in Q3
Oct 28, 2015For third-quarter 2015, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported revenue of €54.6m, up 35% on €40.4m last quarter and up 19.7% on €45.6m a year ago due to increased scheduled ...
Tags: Aixtron, lighting market
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Researchers in USA Develops Vertical Schottky and Pn GaN Diodes on Silicon
Jul 27, 2015Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
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PECVD Have Been Ordered for Manufacturing High-Brightness LEDs
Jul 15, 2015Oxford Instruments says that several PlasmaPro 800 plasma-enhanced chemical vapour deposition (PECVD) systems have been ordered by China's Enraytek Optoelectronics Co for manufacturing high-brightness LEDs. Enraytek's key products are ...
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Researchers in China and Hong Kong Have Claimed The Highest Output Power Density
Jul 13, 2015Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
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