Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs) [Tetsuya Miyazawa et al, J. Appl. Phys., vol118, p085702, ...
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
Technische Universit Wien (TU Wien) in Austria has improved its bi-functional 6.8μm quantum cascade laser and detector (QCLD) technology [Benedikt Schwarz et al, Appl. Phys. Lett., vol107, p071104, 2015]. It is hoped that monolithic ...
Technology engineering & licensing firm ALLOS Semiconductors GmbH of Dresden, Germany have concluded its joint project to establish its mature 150 and 200mm gallium nitride on silicon (GaN-on-Si) technology at Epistar Corp of Hsinchu ...
Tags: electronics, semiconductor, Azzurro GaN-on-Si, Epistar LEDs
Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has shipped the 50th TurboDisc EPIK 700 gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) reactor since the system's ...
Tags: LED wafer, GaN MOCVD Reactot
Oxford Instruments says that several PlasmaPro 800 plasma-enhanced chemical vapour deposition (PECVD) systems have been ordered by China's Enraytek Optoelectronics Co for manufacturing high-brightness LEDs. Enraytek's key products are ...
Cree Inc of Durham, NC, USA has launched the XLamp XHP35 family of LEDs, which yields 50% more light output than Cree's previous highest-performing single-die LED, setting a new performance standard for the 3.5mm footprint. Built on ...
Tags: Cree, single-die LED, LED Light
Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
Tokyo-based Mitsubishi Electric Corp is launching the ML562G84 638nm-wavelength red laser diode (LD), offering what is claimed to be record output power (under pulsed operation) of 2.5W for a 638nm projector light source. The record ...
Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride
KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
At SID's Display Week 2015 event in San Jose, CA, USA (31 May-5 June), Grenoble-based micro/nanotechnology R&D center CEA-Leti of France announced that it has demonstrated a path to fabricating high-density micro-LED arrays for the next ...
Tags: Leti III-V lab microLED, Electrical, Electronics, LED
In a talk and a tutorial at CLEO 2015 (Conference on Lasers and Electro-Optics) in San Jose, CA, USA (10-15 May), a team led by Paul Crump from FBH (Ferdinand-Braun-Institut, Leibniz-Institut fur Hoechstfrequenztechnik) of Berlin, Germany ...
Tags: Diode lasers, FBH
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that Xiamen Changelight Co Ltd of Xiamen, China has purchased multiple TurboDisc EPIK 700 gallium nitride (GaN) metal-organic chemical vapor ...
Tags: LED, MOCVD Systems