Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has launched its Avionics & Radar Tech Hub, a micro-website featuring the latest news, innovations and new products related to avionics and radar applications. The ...
Tags: avionics applications, radar applications, GaN transistors
Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the availability of a family of 1700V and 1200V SiC junction transistors: three 1700V devices (the 110mΩ GA04JT17-247, ...
Tags: GeneSiC, junction transistors, power system
LEDs are projected to grow more than six-fold to nearly $100bn and power conversion electronics to $15bn over the next ten years, reckons market analyst firm Lux Research in the report “Winning the Jump Ball: Sorting Winners from ...
Soraa has developed the next generation of its high external quantum efficiency GaN on GaN LEDs, which outperform the best-documented LED laboratory result by Nichia Chemical Co. at current densities of 100 A/cm2 and beyond as described in ...
Tags: Soraa, GaN on GaN LEDs, LED laboratory
Integra Technologies Inc of El Segundo, CA, USA, which supplies high-power pulsed RF transistors, says that its new IGN0110UM100 is a dual-lead packaged gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor ...
Tags: Integra GaN-on-SiC HEMT, high-power pulsed RF transistors
The global gallium nitride (GaN) semiconductor device market will grow at a compound annual growth rate (CAGR) of 18% over 2012-2016, forecasts a new report from TechNavio (the market research platform of Infiniti Research Ltd). ...
Tags: GaN Device, Lighting Market, Lighting
The inverter market grew significantly to $45bn in 2012, and will reach $71bn by 2020, according to Yole Développement in a report on ‘Inverter market trends for 2013-2020 and major technology changes’. “More than ...
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has announced the next generation of its high external quantum efficiency ...
Tags: Soraa GaN-on-GaN, LED, USA
University of Notre Dame (UND) in the USA and epiwafer maker IQE have claimed record-breaking balanced frequency performance for a nitride semiconductor high-electron-mobility transistor (HEMT) using indium aluminium gallium nitride ...
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has received an award from the US Department of Energy for its work in the ...
Tags: Soraa GaN-on-GaN, Electronics, Lighting
Microsoft founder and Chairman Bill Gates recently took part in a question-and-answer session on popular message board site Reddit. Gates’ Ask Me Anything (AMA) session garnering more than 18,000 comments shortly after it ended. ...
Tags: Microsoft, Bill Gates, Reddit
Tokyo-based Mitsubishi Electric Corp says that it has developed a prototype multi-wire electrical discharge processing technology to cut very hard 4-inch polycrystalline silicon carbide (SiC) ingots into 40 pieces simultaneously. Up to ...
Raytheon of Waltham, MA, USA has officially opened a new manufacturing facility for silicon carbide (SiC) foundry at Raytheon Glenrothes in Scotland (part of subsidiary Raytheon UK, a contractor to the UK Ministry of Defence). Developed ...
Tags: Raytheon, manufacturing facility, SiC
For its fiscal second-quarter 2013 (to end-December 2012), LED lighting giant Cree Inc of Durham, NC, USA has reported revenue of $346.3m, up 14% on the same quarter of 2012 ($304.1m) and up 10% on Q1/2013’s $315.8m. On a non-GAAP ...
Tags: Cree, LED lighting, revenue
Following six years of R&D, Raytheon has opened a silicon carbide fab in Glenrothes Scotland which will offer foundry services as well as its own line of high-temperature ICs. Its SiC process has been developed on-site, with Government ...
Tags: Raytheon, silicon carbide fab, IC