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Al2O3
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CNR-IMM Italy Using Sentech Peald System for New High-K Materials on Wide-Bandgap Devices
Oct 12, 2016SENTECH Instruments GmbH of Berlin, Germany says that the Institute for Microelectronics and Microsystems (CNR-IMM) in Catania – which is part of the Physics and Matter Technologies Department (DSFTM) of the National Research Council ...
Tags: SENTECH Instruments GmbH, CNR-IMM
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Chemical Lift-off of Full-Wafer Gallium Nitride with Zinc Oxide Interlayer
Aug 10, 2016Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
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Sodium Flux Route to Free-Standing Gallium Nitride Substrates
Jul 19, 2016Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...
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Demonstration of Novel High-Efficiency Blue LEDs on Silicon Substrates
Apr 6, 2016Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...
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Indium Gallium Arsenide MOSFET Used as Radio-Frequency Switch
Mar 30, 2016Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
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Cambridge Nanotherm Presenting Nanoceramics for High-Power Packaged LEDs at Strategies in Light
Feb 14, 2016At the Strategies in Light show in Santa Clara, CA, USA (1–3 March), Dr Giles Humpston, applications engineer at Cambridge Nanotherm Ltd of Haverhill, Suffolk UK, will outline how Nanotherm's thermal management technology can help LED ...
Tags: Packaged LEDs, LED industry
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High-Pressure Anneal for Indium Gallium Arsenide Transistors
Aug 10, 2015Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
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Researchers in China and Hong Kong Have Claimed The Highest Output Power Density
Jul 13, 2015Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
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Passivating Nitride Transistors Without Vacuum Processing
Aug 11, 2014Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
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The Research Promises to Help Deliver Higher Semiconductor Performance
Jun 11, 2014At the 2014 Symposium on VLSI Technology, University of California, Santa Barbara (UCSB) has reported what are claimed to be the highest-performing III-V metal-oxide semiconductor (MOS) field-effect transistors (FETs). The research ...
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South Korea Developed a Gate Stack for III-V Quantum Well QW MOSFETs
May 9, 2014Researchers based in USA and South Korea have developed a gate stack for III-V quantum well metal-oxide-semiconductor field-effect transistors (QW MOSFETs) based on a bilayer dielectric of beryllium oxide (BeO) and hafnium dioxide (HfO2) ...
Tags: InGaAs MOSFETs QW MOSFETs InGaAs ALD, Electrical, Electronics
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InGaAs Is a High-Mobility Semiconductor That Should Improve Transistor Characteristics
Apr 22, 2014Researchers in Taiwan have produced indium gallium arsenide (InGaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with low interface trap densities directly on silicon [Yueh-Chin Lin etal, Appl. Phys. Express, vol7, p041202, 2014]. InGaAs ...
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Picodeon Has Developed Its USPLD Surface Coating Technology
Apr 2, 2014Finnish thin film coating specialist Picodeon Ltd Oy has developed its ultra-short pulsed laser deposition (USPLD) surface coating technology to be able to create either porous or dense aluminum oxide (Al2O3) coatings on heat-sensitive ...
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Researchers in France Have Reported on Solar Cell Devices Based on InGaN MQWs
Mar 26, 2014Researchers in France have reported on solar cell devices based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [Sirona Valdueza-Felip et al, Appl. Phys. Express, vol7, p032301, 2014]. Conversion efficiencies of up to 2% ...
Tags: Solar Cells, InGaN
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USPLD Surface Coating Technology to Be Able to Create Either Porous or Dense Al2O3 Coating
Mar 21, 2014Finnish thin film coating specialist Picodeon Ltd Oy has developed its ultra-short pulsed laser deposition (USPLD) surface coating technology to be able to create either porous or dense aluminium oxide (Al2O3) coatings on heat-sensitive ...
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