For fluorescence microscopy, Excelitas Technologies Corp of Waltham, MA, USA (which provides customized photonic solutions to OEMs) has added to its X-Cite product line by launching the X-Cite XYLIS light source, which offers a ...
Tags: Excelitas, Hybrid Drive Technology
Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. ...
Tags: silicon photonics, Lasers
ZEISS Group of Oberkochen, Germany is fueling its growth strategy by expanding into the process control market. Through its new Process Control Solutions (PCS) business unit - part of the ZEISS Semiconductor Manufacturing Technology (SMT) ...
Tags: ZEISS, Control Market
Apple CEO Tim Cook has urged staff to ‘move forward together’ following the election of Donald Trump, a man who attempted to spark an Apple boycott (while tweeting from an iPhone, early in the campaign). In an email to ...
A research team led by faculty scientist Ali Javey at the US Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) has created a transistor with a gate length (the defining dimension of a transistor) just 1nm long, ...
The UK's University of Cambridge and Japan's National Institute for Materials Science have developed single-photon emission devices using layers of graphene, hexagonal boron nitride (hBN), and transition-metal dichalcogenides (TMDs) [Carmen ...
Oracle Networking Group in the USA believes that it has made the first demonstration of an integrated surface-normal coupled laser array on a silicon-on-insulator photonics platform [Shiyun Lin et al, Optics Express, vol24, p21455, 2016]. ...
Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...
Tags: 2D GaN, graphene encapsulation, SiC
By optimizing the material growth and manufacturing process, researchers at the China Academy of Engineering Physics' Research Center of Laser Fusion and the Institute of Applied Physics and Computational Mathematics in Beijing have nearly ...
Tags: Cascade Laser, ceramics
Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
Led by the Department of Energy's Oak Ridge National Laboratory (ORNL), a group of researchers has synthesized a stack of atomically thin monolayers of two lattice-mismatched semiconductors (Xufan Li et al, 'Two-dimensional GaSe/MoSe2 ...
Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
In 2014, the Nobel Prize in physics was awarded for the discovery of the gallium-nitride-based blue-light LED and its use for new, efficient LED-based white lamps. The development efforts in this field, however, do not stop there. The ...
Tags: LED, Nobel Prize
Troika Systems, the developer of quality control management systems for the print industry, will unveil two new technologies at Drupa 2016. At Drupa, Troika will launch CorruCAM, a tool that is able to measure aniloxes within corrugated ...
Tags: Troika, Quality control management system, Print industry, Drupa 2016
Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE